256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM The IS61NVF102418-7.5B3 is a synchronous SRAM (Static Random Access Memory) manufactured by ISSI (Integrated Silicon Solution Inc.). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Density:** 18Mb (1M x 18)
- **Organization:** 1,048,576 words × 18 bits
- **Voltage Supply:** 3.3V (±10%)
- **Speed:** 7.5ns (maximum access time)
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Package:** 119-ball BGA (Ball Grid Array)
- **Interface:** Synchronous (pipelined)
- **Burst Modes:** Linear or Interleaved
- **Burst Lengths:** 2, 4, 8, and full-page
- **Cycle Time:** 7.5ns (133MHz operation)
- **Refresh:** Not required (SRAM technology)
### **Descriptions:**
- The IS61NVF102418-7.5B3 is a high-performance synchronous SRAM designed for applications requiring fast data access and low latency.
- It supports a pipelined architecture for high-speed operation and is commonly used in networking, telecommunications, and high-performance computing systems.
- The device operates at 133MHz with a 7.5ns access time, making it suitable for high-bandwidth applications.
### **Features:**
- **Synchronous Operation:** Clock-controlled for precise timing.
- **Pipelined Architecture:** Enables high-speed data transfers.
- **Byte Write Control:** Individual byte write enable for flexible data handling.
- **Self-Timed Write Cycle:** Simplifies timing requirements.
- **Single 3.3V Power Supply:** Low power consumption.
- **LVTTL-Compatible I/O:** Supports standard logic levels.
- **JTAG Boundary Scan:** Supports IEEE 1149.1 for testability.
- **RoHS Compliant:** Meets environmental standards.
This information is based solely on the manufacturer's datasheet and technical documentation.
