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IS62C1024-55QI from ISSI

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IS62C1024-55QI

Manufacturer: ISSI

128K x 8 HIGH-SPEED CMOS STATIC RAM

Partnumber Manufacturer Quantity Availability
IS62C1024-55QI,IS62C102455QI ISSI 10000 In Stock

Description and Introduction

128K x 8 HIGH-SPEED CMOS STATIC RAM The IS62C1024-55QI is a 1M x 8-bit (1 Megabit) high-speed CMOS static RAM (SRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Density:** 1 Megabit (128K x 8-bit)  
- **Operating Voltage:** 5V ±10%  
- **Access Time:** 55ns  
- **Operating Current:** 40mA (typical)  
- **Standby Current:** 10µA (typical, CMOS standby)  
- **Package:** 32-pin PLCC (Plastic Leaded Chip Carrier)  
- **Operating Temperature Range:** -40°C to +85°C (Industrial grade)  
- **Pin Configuration:** Compatible with industry-standard 128K x 8 SRAMs  

### **Descriptions:**
- The IS62C1024-55QI is a high-performance asynchronous SRAM designed for applications requiring fast access times and low power consumption.  
- It features a fully static operation, meaning no refresh cycles are required.  
- The device is organized as 131,072 words of 8 bits each (128K x 8).  
- It is commonly used in embedded systems, networking equipment, industrial controls, and telecommunications.  

### **Features:**
- **High-Speed Access:** 55ns access time for fast read/write operations.  
- **Low Power Consumption:**  
  - Active current: 40mA (typical)  
  - CMOS standby mode: 10µA (typical)  
- **Wide Operating Voltage Range:** 4.5V to 5.5V.  
- **Fully Static Operation:** No clock or refresh required.  
- **TTL-Compatible Inputs and Outputs:** Ensures easy interfacing with other logic families.  
- **Tri-State Outputs:** Allows bus sharing in multi-memory systems.  
- **Industrial Temperature Range:** Supports operation in harsh environments (-40°C to +85°C).  
- **Industry-Standard Pinout:** Compatible with other 128K x 8 SRAMs.  

This SRAM is suitable for applications requiring reliable, high-speed, and low-power memory storage.

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