Silicon Power Diodes **Part IDB09E120 Manufacturer: Infineon**
### **Specifications:**
- **Voltage Rating (VRRM):** 1200 V
- **Current Rating (IF):** 9 A (average forward current)
- **Peak Forward Surge Current (IFSM):** 100 A (non-repetitive)
- **Forward Voltage (VF):** ~1.7 V (typical at rated current)
- **Reverse Leakage Current (IR):** < 10 µA (at rated voltage)
- **Operating Temperature Range:** -40°C to +150°C
- **Package Type:** TO-252 (DPAK)
### **Descriptions:**
- **Type:** Silicon Carbide (SiC) Schottky Diode
- **Technology:** Infineon’s advanced SiC technology for high efficiency and reliability
- **Application:** Designed for high-voltage, high-frequency power conversion systems
### **Features:**
- **Zero Reverse Recovery Current:** Due to Schottky barrier characteristics
- **High Temperature Operation:** Stable performance at elevated temperatures
- **Low Switching Losses:** Optimized for fast switching applications
- **High Surge Current Capability:** Robust against transient overloads
- **RoHS Compliant:** Environmentally friendly manufacturing
This diode is commonly used in power supplies, solar inverters, and industrial motor drives.
