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IDB30E120 from INF

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IDB30E120

Manufacturer: INF

Silicon Power Diodes

Partnumber Manufacturer Quantity Availability
IDB30E120 INF 4000 In Stock

Description and Introduction

Silicon Power Diodes The part IDB30E120 is manufactured by INFINEON. Here are the specifications, descriptions, and features:

### **Specifications:**  
- **Voltage Rating (VDSS):** 1200V  
- **Current Rating (IC):** 30A  
- **Package:** TO-247  
- **Technology:** IGBT (Insulated Gate Bipolar Transistor)  
- **Gate-Emitter Voltage (VGE):** ±20V  
- **Collector-Emitter Saturation Voltage (VCE(sat)):** Typically 2.1V at 30A  
- **Switching Speed:** Fast switching with low losses  
- **Operating Temperature Range:** -40°C to +150°C  

### **Descriptions:**  
- Designed for high-power switching applications.  
- Suitable for motor drives, inverters, and power supplies.  
- Robust construction for industrial and automotive applications.  

### **Features:**  
- Low conduction and switching losses.  
- High short-circuit capability.  
- Positive temperature coefficient for easy paralleling.  
- Integrated freewheeling diode for improved efficiency.  

For exact datasheet details, refer to the official INFINEON documentation.

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