Silicon Power Diodes The part **IDD23E60** is a power semiconductor device manufactured by **Infineon Technologies**. Below are its key specifications, descriptions, and features based on available data:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IDD23E60
- **Type:** IGBT (Insulated Gate Bipolar Transistor) or Power Module (exact type may vary based on variant)
- **Voltage Rating (VCES):** 600V
- **Current Rating (IC):** 23A (nominal)
- **Power Dissipation:** Depends on thermal conditions (exact value not specified)
- **Package Type:** Likely TO-247 or another high-power package (specific variant-dependent)
- **Switching Frequency:** Optimized for medium to high-frequency applications (exact range not specified)
- **Operating Temperature Range:** Typically -40°C to +150°C (junction temperature)
### **Descriptions:**
- The **IDD23E60** is designed for high-efficiency power switching applications, such as motor drives, inverters, and industrial power supplies.
- It combines low conduction losses with robust switching performance, making it suitable for energy-efficient systems.
- Infineon’s advanced trench or field-stop technology (if applicable) ensures improved thermal and electrical characteristics.
### **Features:**
- **Low Saturation Voltage (VCE(sat)):** Enhances efficiency by reducing conduction losses.
- **Fast Switching:** Optimized for reduced switching losses in high-frequency applications.
- **High Short-Circuit Withstand Time:** Improves reliability in fault conditions.
- **Temperature-Stable Performance:** Maintains consistent operation across a wide temperature range.
- **RoHS Compliance:** Meets environmental standards for hazardous substance restrictions.
For exact datasheet details (e.g., gate charge, switching times), refer to Infineon’s official documentation for the specific variant of **IDD23E60**.
