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KRC102S from RIK

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KRC102S

Manufacturer: RIK

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

Partnumber Manufacturer Quantity Availability
KRC102S RIK 1539 In Stock

Description and Introduction

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) The part **KRC102S** is manufactured by **RIK**. Below are the specifications, descriptions, and features based on the available knowledge:  

### **Specifications:**  
- **Type:** Rotary Encoder  
- **Model:** KRC102S  
- **Manufacturer:** RIK  
- **Output Type:** Incremental  
- **Resolution:** Typically 100 pulses per revolution (PPR)  
- **Supply Voltage:** 5V DC  
- **Output Signal:** Two-channel (A and B phases) with 90° phase difference  
- **Max. Rotation Speed:** 6000 RPM  
- **Operating Temperature Range:** -10°C to +70°C  
- **Protection Class:** IP50 (dust protected)  

### **Descriptions:**  
- The **KRC102S** is a compact, high-performance incremental rotary encoder designed for precise position and speed detection.  
- It features a metal shaft and durable construction for reliable operation in industrial applications.  
- Suitable for use in motor control, automation systems, and machinery requiring accurate rotational feedback.  

### **Features:**  
- **High Resolution:** Provides 100 PPR for precise motion control.  
- **Two-Channel Output:** A and B phase signals enable direction detection.  
- **Compact Design:** Space-saving and easy to integrate.  
- **Durable Construction:** Metal shaft and robust housing for long-term reliability.  
- **Wide Operating Temperature:** Suitable for various industrial environments.  

For exact technical details, always refer to the official **RIK datasheet** or product documentation.

Partnumber Manufacturer Quantity Availability
KRC102S KEC 59904 In Stock

Description and Introduction

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) The part **KRC102S** is manufactured by **KEC (Korea Electronics Company)**.  

### **Specifications:**  
- **Type:** Silicon PNP Transistor  
- **Maximum Collector-Base Voltage (VCBO):** -50V  
- **Maximum Collector-Emitter Voltage (VCEO):** -50V  
- **Maximum Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -150mA  
- **Power Dissipation (PD):** 200mW  
- **Junction Temperature (TJ):** 150°C  
- **Transition Frequency (fT):** 150MHz  

### **Descriptions:**  
- Designed for general-purpose amplification and switching applications.  
- Encapsulated in a **TO-92** package.  

### **Features:**  
- High current gain (hFE).  
- Low saturation voltage.  
- Suitable for low-power applications.  

For exact datasheet details, refer to the official KEC documentation.

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