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KSH44H11TF from SAMSUNG

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KSH44H11TF

Manufacturer: SAMSUNG

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSH44H11TF SAMSUNG 72 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor The KSH44H11TF is a power transistor manufactured by SAMSUNG. Below are the specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** NPN Silicon Epitaxial Planar Transistor  
- **Application:** High-frequency power amplification in VHF/UHF bands  
- **Collector-Emitter Voltage (VCEO):** 40V  
- **Collector-Base Voltage (VCBO):** 60V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 1A  
- **Total Power Dissipation (Ptot):** 10W  
- **Transition Frequency (fT):** 1.5GHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package Type:** TO-220F (fully molded)  

### **Descriptions:**  
- Designed for RF power amplification in communication equipment.  
- Suitable for applications in the VHF and UHF frequency ranges.  
- Features high power gain and excellent thermal stability.  

### **Features:**  
- High transition frequency for RF applications.  
- Low saturation voltage for improved efficiency.  
- Fully molded TO-220F package for better heat dissipation.  
- Suitable for use in linear and switching applications.  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSH44H11TF FAIRCHILD 2000 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor The KSH44H11TF is a PNP power transistor manufactured by Fairchild Semiconductor. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Collector-Emitter Voltage (VCE):** -80V  
- **Collector-Base Voltage (VCB):** -100V  
- **Emitter-Base Voltage (VEB):** -5V  
- **Collector Current (IC):** -8A (continuous)  
- **Power Dissipation (PD):** 50W (at 25°C)  
- **DC Current Gain (hFE):** 40 to 160 (at IC = 4A, VCE = -4V)  
- **Operating Junction Temperature (TJ):** -65°C to +150°C  
- **Storage Temperature (Tstg):** -65°C to +150°C  

### **Description:**  
The KSH44H11TF is a high-voltage, high-current PNP transistor designed for power amplification and switching applications. It is housed in a TO-220F package, providing efficient thermal performance.  

### **Features:**  
- High current capability (-8A)  
- High voltage rating (-80V VCE)  
- Low saturation voltage for improved efficiency  
- Fast switching speed  
- TO-220F (fully insulated) package for better thermal dissipation  

This transistor is commonly used in power supply circuits, motor control, and general-purpose amplification/switching applications.  

(Note: Always refer to the official Fairchild datasheet for precise details and application guidelines.)

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor

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