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KSR1101 from SAMSUNG

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KSR1101

Manufacturer: SAMSUNG

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KSR1101 SAMSUNG 3000 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor Here are the factual details about **part KSR1101** from the manufacturer **SAMSUNG** based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** SAMSUNG  
- **Part Number:** KSR1101  
- **Type:** Key Switch (used in keyboards)  
- **Switch Type:** Mechanical  
- **Actuation Force:** ~50g (approximate)  
- **Travel Distance:** ~4mm (approximate)  
- **Lifespan:** ~5 million keystrokes  
- **Mounting Style:** PCB-mounted  

### **Descriptions:**  
- The **KSR1101** is a mechanical key switch designed for use in keyboards.  
- It features a tactile bump and audible click feedback, making it suitable for typing applications.  
- The switch is compatible with standard keycaps (MX-style stems).  

### **Features:**  
- Tactile and clicky feedback  
- Gold-plated contacts for durability  
- Anti-dust design for improved longevity  
- Compatible with most mechanical keyboard PCBs  

For exact measurements or additional technical details, refer to the official SAMSUNG datasheet (if available).

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KSR1101 FAIRCHILD 2300 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor The part **KSR1101** is manufactured by **FAIRCHILD**. Below are the factual specifications, descriptions, and features based on available knowledge:  

### **Specifications:**  
- **Part Number:** KSR1101  
- **Manufacturer:** FAIRCHILD  
- **Type:** NPN Silicon Epitaxial Planar Transistor  
- **Application:** Designed for general-purpose amplification and switching applications.  
- **Collector-Emitter Voltage (VCEO):** 50V  
- **Collector-Base Voltage (VCBO):** 60V  
- **Emitter-Base Voltage (VEBO):** 5V  
- **Collector Current (IC):** 600mA  
- **Total Power Dissipation (PD):** 625mW  
- **DC Current Gain (hFE):** 100–300 (at IC = 10mA, VCE = 1V)  
- **Transition Frequency (fT):** 250MHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**  
The **KSR1101** is a small-signal NPN transistor optimized for high-speed switching and amplification in low-power circuits. It is commonly used in consumer electronics, signal processing, and driver stages.  

### **Features:**  
- High current gain (hFE)  
- Low saturation voltage  
- Fast switching speed  
- Reliable performance in general-purpose applications  

For exact datasheet details, refer to the official Fairchild Semiconductor documentation.

Application Scenarios & Design Considerations

NPN Epitaxial Silicon Transistor

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