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KST2907AMTF from FSC,Fairchild Semiconductor

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KST2907AMTF

Manufacturer: FSC

PNP Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KST2907AMTF FSC 3000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor **Part Number:** KST2907AMTF  
**Manufacturer:** FSC (Fairchild Semiconductor)  

### **Specifications:**  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -60V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Drain Current (ID):** -5A  
- **Power Dissipation (PD):** 3W  
- **On-Resistance (RDS(on)):** 0.3Ω (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Package:** TO-252 (DPAK)  

### **Features:**  
- High-speed switching performance  
- Low gate charge for improved efficiency  
- Avalanche energy specified for ruggedness  
- Lead-free and RoHS compliant  

### **Applications:**  
- Power management in DC-DC converters  
- Motor control circuits  
- Load switching applications  

This information is based on Fairchild Semiconductor's datasheet for the KST2907AMTF.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KST2907AMTF FAIRCHILD 9000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The part **KST2907AMTF** is manufactured by **FAIRCHILD**. Below are its specifications, descriptions, and features based on the available knowledge:  

### **Specifications:**  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Package:** SOT-23 (Surface Mount)  
- **Collector-Emitter Voltage (VCEO):** -60V  
- **Collector-Base Voltage (VCBO):** -60V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -600mA  
- **Power Dissipation (PD):** 350mW  
- **DC Current Gain (hFE):** 100-300 (at IC = -10mA, VCE = -1V)  
- **Transition Frequency (fT):** 200MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**  
The **KST2907AMTF** is a PNP transistor in a **SOT-23** surface-mount package, designed for general-purpose amplification and switching applications. It is a complementary device to the **2N2907** transistor but in a smaller form factor.  

### **Features:**  
- High current gain (hFE)  
- Low saturation voltage  
- High-speed switching capability  
- Suitable for low-power applications  
- Compact SOT-23 package for space-constrained designs  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor

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