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KST2907AMTF from FSC,Fairchild Semiconductor

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KST2907AMTF

Manufacturer: FSC

PNP Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KST2907AMTF FSC 3000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor **Part Number:** KST2907AMTF  
**Manufacturer:** FSC (Fairchild Semiconductor)  

### **Specifications:**  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -60V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Drain Current (ID):** -5A  
- **Power Dissipation (PD):** 3W  
- **On-Resistance (RDS(on)):** 0.3Ω (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1V to -3V  
- **Package:** TO-252 (DPAK)  

### **Features:**  
- High-speed switching performance  
- Low gate charge for improved efficiency  
- Avalanche energy specified for ruggedness  
- Lead-free and RoHS compliant  

### **Applications:**  
- Power management in DC-DC converters  
- Motor control circuits  
- Load switching applications  

This information is based on Fairchild Semiconductor's datasheet for the KST2907AMTF.

Partnumber Manufacturer Quantity Availability
KST2907AMTF FAIRCHILD 9000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The part **KST2907AMTF** is manufactured by **FAIRCHILD**. Below are its specifications, descriptions, and features based on the available knowledge:  

### **Specifications:**  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Package:** SOT-23 (Surface Mount)  
- **Collector-Emitter Voltage (VCEO):** -60V  
- **Collector-Base Voltage (VCBO):** -60V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -600mA  
- **Power Dissipation (PD):** 350mW  
- **DC Current Gain (hFE):** 100-300 (at IC = -10mA, VCE = -1V)  
- **Transition Frequency (fT):** 200MHz  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**  
The **KST2907AMTF** is a PNP transistor in a **SOT-23** surface-mount package, designed for general-purpose amplification and switching applications. It is a complementary device to the **2N2907** transistor but in a smaller form factor.  

### **Features:**  
- High current gain (hFE)  
- Low saturation voltage  
- High-speed switching capability  
- Suitable for low-power applications  
- Compact SOT-23 package for space-constrained designs  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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