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KST5088 from SAMSUNG

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KST5088

Manufacturer: SAMSUNG

NPN Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KST5088 SAMSUNG 3000 In Stock

Description and Introduction

NPN Epitaxial Silicon Transistor **Part Number:** KST5088  
**Manufacturer:** SAMSUNG  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Material:** Silicon (Si)  
- **Maximum Collector-Base Voltage (VCB):** 30V  
- **Maximum Collector-Emitter Voltage (VCE):** 30V  
- **Maximum Emitter-Base Voltage (VEB):** 5V  
- **Maximum Collector Current (IC):** 100mA  
- **Power Dissipation (PD):** 300mW  
- **DC Current Gain (hFE):** 100-300  
- **Transition Frequency (fT):** 100MHz  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package Type:** TO-92  

### **Descriptions:**  
The KST5088 is a general-purpose NPN transistor designed for amplification and switching applications. It is commonly used in low-power circuits due to its moderate current and voltage ratings.  

### **Features:**  
- High current gain (hFE)  
- Low noise performance  
- Suitable for small-signal amplification  
- Compact TO-92 package for easy PCB mounting  

No additional suggestions or guidance provided.

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