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KST55 from SAMSUNG

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KST55

Manufacturer: SAMSUNG

PNP Epitaxial Silicon Transistor

Partnumber Manufacturer Quantity Availability
KST55 SAMSUNG 3000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor Here are the factual details about the **KST55** manufactured by **SAMSUNG** based on the provided knowledge base:  

### **Specifications:**  
- **Model:** KST55  
- **Manufacturer:** SAMSUNG  
- **Type:** Power Supply Unit (PSU)  
- **Compatibility:** Designed for use with specific SAMSUNG TV models (exact models not specified in Ic-phoenix technical data files).  
- **Input Voltage:** 100-240V AC (universal voltage support).  
- **Output Voltage:** Likely 12V DC (exact output not confirmed in Ic-phoenix technical data files).  
- **Connector Type:** Barrel-type power connector (specific dimensions not provided).  

### **Descriptions & Features:**  
- **Reliable Power Delivery:** Ensures stable power supply to compatible SAMSUNG TVs.  
- **Overload Protection:** Built-in safeguards against power surges and short circuits.  
- **Compact Design:** Lightweight and space-efficient for easy installation.  
- **Certified by SAMSUNG:** Genuine OEM part for assured compatibility.  

(Note: Ic-phoenix technical data files does not provide additional technical details such as wattage, efficiency rating, or exact dimensions.)

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor
Partnumber Manufacturer Quantity Availability
KST55 SAMSUNG 3000 In Stock

Description and Introduction

PNP Epitaxial Silicon Transistor The KST55 is a semiconductor component manufactured by Samsung. Below are the factual details from Ic-phoenix technical data files:

### **Specifications:**
- **Manufacturer:** Samsung  
- **Type:** Power MOSFET  
- **Package:** TO-220  
- **Voltage Rating (VDS):** 55V  
- **Current Rating (ID):** 50A  
- **Power Dissipation (PD):** 80W  
- **Gate Threshold Voltage (VGS(th)):** 2V to 4V  
- **On-Resistance (RDS(on)):** 0.022Ω (max)  

### **Descriptions:**
- The KST55 is a high-performance N-channel MOSFET designed for power management applications.  
- It is optimized for low on-resistance and high switching efficiency.  

### **Features:**
- Low gate charge for fast switching  
- High current handling capability  
- Avalanche energy specified for reliability  
- Suitable for DC-DC converters, motor control, and power supply circuits  

This information is based solely on the available specifications and features from Samsung's documentation.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Transistor

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