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KTA1666 from KEC

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KTA1666

Manufacturer: KEC

EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)

Partnumber Manufacturer Quantity Availability
KTA1666 KEC 10000 In Stock

Description and Introduction

EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING) **Part Number:** KTA1666  
**Manufacturer:** KEC (Korea Electronics Company)  

### **Specifications:**  
- **Type:** NPN Bipolar Junction Transistor (BJT)  
- **Package:** SOT-23 (Surface Mount)  
- **Collector-Base Voltage (VCB):** 60V  
- **Collector-Emitter Voltage (VCE):** 50V  
- **Emitter-Base Voltage (VEB):** 5V  
- **Collector Current (IC):** 100mA  
- **Power Dissipation (PD):** 200mW  
- **DC Current Gain (hFE):** 100-400 (at IC = 10mA, VCE = 5V)  
- **Transition Frequency (fT):** 250MHz  

### **Descriptions and Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain and low saturation voltage.  
- Suitable for small-signal amplification in portable and compact devices.  
- RoHS compliant (lead-free).  
- Compact SOT-23 package for space-constrained PCB designs.  

(Note: Always verify datasheet details for exact application suitability.)

Partnumber Manufacturer Quantity Availability
KTA1666 长电 910 In Stock

Description and Introduction

EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING) The part **KTA1666** is manufactured by **长电 (Changjiang Electronics Technology, CJT)**. Below are the specifications, descriptions, and features based on available information:

### **Specifications:**
- **Type:** PNP Epitaxial Planar Transistor  
- **Package:** SOT-23  
- **Collector-Emitter Voltage (VCEO):** -50V  
- **Collector-Base Voltage (VCBO):** -60V  
- **Emitter-Base Voltage (VEBO):** -5V  
- **Collector Current (IC):** -1.5A  
- **Power Dissipation (Pd):** 0.3W  
- **Junction Temperature (Tj):** 150°C  
- **Storage Temperature (Tstg):** -55°C to +150°C  

### **Description:**
The **KTA1666** is a **PNP silicon transistor** designed for general-purpose amplification and switching applications. It is housed in a **SOT-23** surface-mount package, making it suitable for compact electronic designs.

### **Features:**
- **High current capability** (up to 1.5A)  
- **Low saturation voltage** for efficient switching  
- **Epitaxial planar construction** for improved performance  
- **Small form factor (SOT-23)** for space-constrained applications  

For detailed electrical characteristics and application notes, refer to the official datasheet from **长电 (CJT)**.

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