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kta1535t from KEC

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kta1535t

Manufacturer: KEC

EPITAXIAL PLANAR PNP TRANSISTOR

Partnumber Manufacturer Quantity Availability
kta1535t KEC 3000 In Stock

Description and Introduction

EPITAXIAL PLANAR PNP TRANSISTOR The **KTA1535T** is a PNP transistor manufactured by **KEC (Korea Electronics Company)**. Here are its specifications, descriptions, and features:

### **Specifications:**
- **Transistor Type:** PNP  
- **Maximum Collector-Base Voltage (VCB):** -50V  
- **Maximum Collector-Emitter Voltage (VCE):** -50V  
- **Maximum Emitter-Base Voltage (VEB):** -5V  
- **Collector Current (IC):** -1.5A  
- **Power Dissipation (PD):** 1W  
- **DC Current Gain (hFE):** 60-320  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package Type:** TO-92  

### **Descriptions:**
- The **KTA1535T** is a general-purpose PNP transistor designed for amplification and switching applications.  
- It is commonly used in low-power circuits, audio amplifiers, and signal processing.  
- The TO-92 package makes it suitable for through-hole PCB mounting.  

### **Features:**
- High current gain (hFE) range for improved performance.  
- Low saturation voltage for efficient switching.  
- Compact and widely compatible TO-92 package.  
- Suitable for general-purpose electronic applications.  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

EPITAXIAL PLANAR PNP TRANSISTOR
Partnumber Manufacturer Quantity Availability
KTA1535T KEC 25000 In Stock

Description and Introduction

EPITAXIAL PLANAR PNP TRANSISTOR The KTA1535T is a PNP transistor manufactured by KEC (Korea Electronics Company).  

### **Specifications:**  
- **Type:** PNP Bipolar Junction Transistor (BJT)  
- **Package:** SOT-23 (Surface Mount)  
- **Maximum Collector-Base Voltage (VCBO):** -50V  
- **Maximum Collector-Emitter Voltage (VCEO):** -50V  
- **Maximum Emitter-Base Voltage (VEBO):** -5V  
- **Continuous Collector Current (IC):** -150mA  
- **Total Power Dissipation (PTOT):** 200mW  
- **DC Current Gain (hFE):** 120 to 400 (at IC = -2mA, VCE = -5V)  
- **Transition Frequency (fT):** 200MHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain (hFE) for improved signal amplification.  
- Suitable for low-power and high-frequency circuits.  
- Compact SOT-23 package for space-constrained PCB designs.  
- RoHS compliant.  

For exact performance characteristics, refer to the official KEC datasheet.

Application Scenarios & Design Considerations

EPITAXIAL PLANAR PNP TRANSISTOR

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