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KDS221E from KEC

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KDS221E

Manufacturer: KEC

SILICON EPITAXIAL PLANAR DIODE

Partnumber Manufacturer Quantity Availability
KDS221E KEC 16700 In Stock

Description and Introduction

SILICON EPITAXIAL PLANAR DIODE The part **KDS221E** is manufactured by **KEC (Korea Electronics Company)**.

### **Specifications:**
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 3.5A  
- **Power Dissipation (PD):** 20W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) - 2.5V (max)  

### **Descriptions & Features:**
- Designed for **switching applications** in power management circuits.  
- **Low on-resistance** for improved efficiency.  
- **Fast switching speed** for high-frequency applications.  
- **TO-252 (DPAK) package** for surface-mount applications.  
- Suitable for **DC-DC converters, motor control, and load switching**.  

For exact performance characteristics, refer to the official **KEC datasheet**.

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