N01L163WC2AT2-55IManufacturer: NANOAMP, SOLUTION, SOLUTIONS 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit |
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| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| N01L163WC2AT2-55I,N01L163WC2AT255I | NANOAMP, SOLUTION, SOLUTIONS | 1608 | In Stock |
Description and Introduction
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit The **N01L163WC2AT2-55I** is a high-performance electronic component designed for advanced computing and memory applications. This device belongs to the category of **low-power synchronous DRAM (SDRAM)** and is optimized for efficiency, speed, and reliability in embedded systems, networking equipment, and industrial automation.  
With a **16M x 16-bit** organization, the N01L163WC2AT2-55I offers a **55ns access time**, making it suitable for applications requiring rapid data processing. Its **1.8V operating voltage** ensures reduced power consumption, aligning with modern energy-efficient design requirements. The component supports **burst read and write operations**, enhancing data throughput in high-speed environments.   Engineered for stability, this SDRAM features **auto-refresh and self-refresh modes**, ensuring data integrity even in low-power states. Its **industrial-grade temperature range (-40°C to +85°C)** makes it resilient in harsh operating conditions, ideal for automotive, aerospace, and ruggedized systems.   The N01L163WC2AT2-55I is housed in a **compact TSOP package**, facilitating space-constrained PCB designs. Its compliance with **JEDEC standards** guarantees compatibility with industry specifications, simplifying integration into existing architectures.   For developers seeking a balance of performance, power efficiency, and durability, this component presents a reliable solution for demanding memory applications. |
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Application Scenarios & Design Considerations
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
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