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NSS30101LT1G from ON,ON Semiconductor

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NSS30101LT1G

Manufacturer: ON

30 V, 2 A, Low VCE(sat) NPN Transistor

Partnumber Manufacturer Quantity Availability
NSS30101LT1G ON 24830 In Stock

Description and Introduction

30 V, 2 A, Low VCE(sat) NPN Transistor **Introduction to the NSS30101LT1G Electronic Component**  

The NSS30101LT1G is a high-performance, low-voltage, single P-channel MOSFET designed for power management and switching applications. This component is optimized for efficiency in portable electronics, battery-powered devices, and other applications requiring minimal power loss.  

With a compact SOT-23 package, the NSS30101LT1G offers a space-saving solution while delivering reliable performance. It features a low threshold voltage and minimal on-resistance, making it ideal for load switching, power distribution, and voltage regulation tasks. The device also includes built-in protection against overcurrent and thermal stress, enhancing system durability.  

Key specifications include a drain-source voltage (VDS) rating of -20V and a continuous drain current (ID) of -3.1A, ensuring robust operation under typical conditions. Its fast switching characteristics contribute to improved energy efficiency in dynamic applications.  

Engineers and designers often select the NSS30101LT1G for its balance of performance, size, and reliability, making it a versatile choice for modern electronic systems. Whether used in consumer electronics, industrial controls, or automotive applications, this MOSFET provides a dependable solution for efficient power management.

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