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NTB60N06T4G from ON,ON Semiconductor

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15.625ms

NTB60N06T4G

Manufacturer: ON

Power MOSFET 60 Amps, 60 Volts

Partnumber Manufacturer Quantity Availability
NTB60N06T4G ON 10000 In Stock

Description and Introduction

Power MOSFET 60 Amps, 60 Volts # Introduction to the NTB60N06T4G Power MOSFET  

The NTB60N06T4G is an N-channel power MOSFET designed for high-efficiency switching applications. With a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of 60A, this component is well-suited for power management in automotive, industrial, and consumer electronics.  

Featuring low on-resistance (RDS(on)) of just 7.5mΩ (typical at 10V VGS), the NTB60N06T4G minimizes conduction losses, improving overall system efficiency. Its fast switching characteristics make it ideal for DC-DC converters, motor drives, and battery protection circuits.  

The MOSFET incorporates advanced trench technology, ensuring robust performance in high-current environments. It also includes an integrated Schottky diode, enhancing reliability in inductive load applications. The device is housed in a D2PAK (TO-263) package, providing excellent thermal dissipation while maintaining a compact footprint.  

With a wide operating temperature range and strong avalanche energy capability, the NTB60N06T4G offers durability in demanding conditions. Engineers favor this component for its balance of performance, efficiency, and cost-effectiveness in power electronics designs.

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