IC Phoenix logo

Home ›  P  › P21 > PH1955L

PH1955L from PHI,Philips

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

PH1955L

Manufacturer: PHI, NXP

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Partnumber Manufacturer Quantity Availability
PH1955L PHI, NXP 670 In Stock

Description and Introduction

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The PH1955L is a high-performance electronic component designed for precision applications in modern circuitry. As a versatile semiconductor device, it offers reliable operation in a range of environments, making it suitable for industrial, automotive, and consumer electronics applications.  

Engineered with advanced materials and manufacturing techniques, the PH1955L delivers stable performance under varying voltage and temperature conditions. Its compact form factor allows for seamless integration into densely populated circuit boards, while its low power consumption enhances energy efficiency in electronic systems.  

Key features of the PH1955L include high-speed switching capabilities, minimal signal distortion, and robust thermal management. These attributes make it an ideal choice for power regulation, signal amplification, and switching circuits. Additionally, its durability ensures long-term reliability, reducing maintenance requirements in critical applications.  

Whether used in power supplies, motor control systems, or communication devices, the PH1955L provides consistent performance with minimal drift over time. Its design prioritizes both functionality and longevity, meeting the demands of modern electronic designs. For engineers and designers seeking a dependable component, the PH1955L represents a well-balanced solution for a variety of technical challenges.

Application Scenarios & Design Considerations

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Alternative Part Number

  • IRF540N --: Widely available N-channel power MOSFET with comparable voltage and current ratings, suitable replacement for switching applications.
  • STP55NF06 --: Robust N-channel MOSFET with similar RDS(on) and current capability, good drop-in alternative for power switching.
  • FQP30N06L --: Logic-level N-channel MOSFET offering similar performance and easy availability as a general-purpose substitute.
  • BSS138 --: Widely available N-channel MOSFET in SOT-23, commonly used as a general replacement for small-signal NXP MOSFETs like PH1955L.
  • 2N7002 --: Industry-standard small-signal N-channel MOSFET in SOT-23 with similar voltage and current ratings, easy drop-in substitute.
  • IRLML6344 --: Logic-level N-channel MOSFET in SOT-23 offering comparable or better RDS(on) and current handling for switching applications.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips