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SI5908DC-T1-E3 from VISHAY

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SI5908DC-T1-E3

Manufacturer: VISHAY

Dual N-Channel 20-V (D-S) MOSFET

Partnumber Manufacturer Quantity Availability
SI5908DC-T1-E3,SI5908DCT1E3 VISHAY 12000 In Stock

Description and Introduction

Dual N-Channel 20-V (D-S) MOSFET The SI5908DC-T1-E3 is a MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** SI5908DC-T1-E3  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 30 V  
- **Continuous Drain Current (ID):** 13 A  
- **RDS(ON) (Max) @ VGS = 10 V:** 8.5 mΩ  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Power Dissipation (PD):** 2.5 W  
- **Package:** PowerPAK® SO-8  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The SI5908DC-T1-E3 is a high-performance N-channel MOSFET designed for power management applications.  
- It features low on-resistance (RDS(ON)) and high current capability, making it suitable for switching and amplification in various circuits.  

### **Features:**  
- Low RDS(ON) for reduced conduction losses  
- Optimized for high-efficiency power conversion  
- Fast switching performance  
- Compact PowerPAK® SO-8 package for space-saving designs  
- RoHS compliant  

This information is based solely on the manufacturer's datasheet and product documentation.

Application Scenarios & Design Considerations

Dual N-Channel 20-V (D-S) MOSFET
Partnumber Manufacturer Quantity Availability
SI5908DC-T1-E3,SI5908DCT1E3 SI 840 In Stock

Description and Introduction

Dual N-Channel 20-V (D-S) MOSFET The SI5908DC-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix. Below are its key specifications, descriptions, and features:  

### **Manufacturer:**  
Vishay Siliconix (SI)  

### **Specifications:**  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -30 V  
- **Continuous Drain Current (ID):** -5.8 A  
- **RDS(ON) (Max) @ VGS = -10 V:** 50 mΩ  
- **RDS(ON) (Max) @ VGS = -4.5 V:** 70 mΩ  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Power Dissipation (PD):** 2.5 W  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-23 (TO-236AB)  

### **Descriptions & Features:**  
- **Low On-Resistance (RDS(ON)):** Provides efficient power handling.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Logic-Level Gate Drive:** Compatible with low-voltage control signals.  
- **Avalanche Energy Rated:** Enhances reliability in rugged conditions.  
- **Lead (Pb)-Free & RoHS Compliant:** Meets environmental standards.  
- **Applications:** Power management, load switching, DC-DC converters, and battery protection circuits.  

This information is based solely on the manufacturer's datasheet.

Application Scenarios & Design Considerations

Dual N-Channel 20-V (D-S) MOSFET

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