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SI9111DY-T1 from VISHAY

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SI9111DY-T1

Manufacturer: VISHAY

High-Voltage Switchmode Controllers

Partnumber Manufacturer Quantity Availability
SI9111DY-T1,SI9111DYT1 VISHAY 5000 In Stock

Description and Introduction

High-Voltage Switchmode Controllers The SI9111DY-T1 is a MOSFET driver IC manufactured by Vishay. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Vishay  

### **Part Number:**  
SI9111DY-T1  

### **Description:**  
The SI9111DY-T1 is a high-speed, dual MOSFET driver designed for switching applications. It is optimized for driving power MOSFETs and IGBTs in high-frequency circuits.  

### **Key Features:**  
- **Dual Output:** Capable of driving two MOSFETs independently.  
- **High-Speed Switching:** Designed for fast switching applications.  
- **Wide Supply Voltage Range:** Operates over a broad voltage range for flexibility.  
- **Low Propagation Delay:** Ensures minimal delay in signal transmission.  
- **High Peak Output Current:** Provides strong drive capability for power MOSFETs.  
- **Under-Voltage Lockout (UVLO):** Protects the circuit from low-voltage conditions.  
- **Thermal Shutdown:** Prevents overheating damage.  

### **Package:**  
- **SOIC-8 (Small Outline Integrated Circuit, 8-pin)**  

### **Applications:**  
- Switch-mode power supplies (SMPS)  
- DC-DC converters  
- Motor drives  
- Power inverters  

This information is based on Vishay's datasheet and product documentation. For detailed electrical characteristics and performance curves, refer to the official datasheet.

Partnumber Manufacturer Quantity Availability
SI9111DY-T1,SI9111DYT1 VISHAY 4000 In Stock

Description and Introduction

High-Voltage Switchmode Controllers The **SI9111DY-T1** is a **MOSFET** manufactured by **Vishay**.  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Voltage Rating (VDS):** 30V  
- **Current Rating (ID):** 20A (continuous)  
- **RDS(ON) (Max):** 0.022Ω @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 2.5W  
- **Package:** SO-8 (Surface Mount)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power switching.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Enhances reliability in rugged conditions.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage control signals.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This MOSFET is commonly used in **DC-DC converters, motor control, and power management applications**.

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