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TC551001

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

Partnumber Manufacturer Quantity Availability
TC551001 41 In Stock

Description and Introduction

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM The TC551001 is a 128K x 8-bit CMOS Static RAM (SRAM) manufactured by Toshiba.  

### **Key Specifications:**  
- **Organization:** 128K × 8 bits  
- **Operating Voltage:** 5V ±10%  
- **Access Time:** 70 ns (max)  
- **Low Power Consumption:**  
  - Active: 40 mA (max)  
  - Standby: 10 µA (max)  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package:** 32-pin DIP (Dual In-line Package) or SOP (Small Outline Package)  

### **Features:**  
- **Fully Static Operation:** No refresh required  
- **TTL-Compatible Inputs/Outputs**  
- **Single 5V Power Supply**  
- **Three-State Outputs**  
- **Battery Backup Operation Support**  
- **High Noise Immunity**  

### **Applications:**  
- Embedded systems  
- Cache memory  
- Battery-powered devices  
- Industrial and consumer electronics  

This SRAM is designed for high-speed, low-power applications requiring reliable non-volatile memory solutions.

Application Scenarios & Design Considerations

SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM

Alternative Part Number

  • IS61C1024AL --: 128K x 8 low-power CMOS SRAM with similar asynchronous parallel interface and 5V-compatible operation, a common drop-in replacement for TC551001 in many designs.
  • CY62256 --: 32K x 8 asynchronous SRAM in the same family of byte-wide static RAMs; widely available and functionally compatible where address space allows.
  • AS6C1008 --: 128K x 8 low-power CMOS SRAM designed as a direct replacement for legacy 5V SRAMs like the TC551001, with matching pinout and timing.

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