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TC554001AF-70 from TOSH,TOSHIBA

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TC554001AF-70

Manufacturer: TOSH, TOS

524,288-WORD BY 8-BIT STATIC RAM

Partnumber Manufacturer Quantity Availability
TC554001AF-70,TC554001AF70 TOSH, TOS 134 In Stock

Description and Introduction

524,288-WORD BY 8-BIT STATIC RAM The TC554001AF-70 is a 4Mbit (512K x 8) Static RAM (SRAM) manufactured by Toshiba. Below are its specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 512K words × 8 bits  
- **Supply Voltage:** 5V ±10%  
- **Access Time:** 70ns  
- **Operating Current:** 70mA (max)  
- **Standby Current:** 5mA (max) (CMOS level)  
- **Package:** 32-pin SOP (Small Outline Package)  
- **Operating Temperature Range:** 0°C to +70°C  
- **Data Retention Voltage:** 2V (min)  

### **Descriptions:**
- The TC554001AF-70 is a high-speed CMOS static RAM designed for applications requiring fast access times and low power consumption.  
- It is compatible with TTL levels and features a fully static operation, meaning no clock or refresh is required.  
- The device is suitable for battery-backed or low-power systems due to its low standby current.  

### **Features:**
- **High-Speed Access:** 70ns maximum access time.  
- **Low Power Consumption:**  
  - Operating current: 70mA (max)  
  - Standby current: 5mA (max) (CMOS level)  
- **Wide Voltage Range:** Operates at 5V ±10%.  
- **Fully Static Operation:** No refresh or clock required.  
- **TTL-Compatible Inputs/Outputs:** Ensures easy interfacing with standard logic circuits.  
- **Battery Backup Capability:** Data retention at voltages as low as 2V.  
- **32-pin SOP Package:** Compact and suitable for space-constrained applications.  

This information is based on Toshiba's official documentation for the TC554001AF-70 SRAM.

Application Scenarios & Design Considerations

524,288-WORD BY 8-BIT STATIC RAM

Alternative Part Number

  • IS61C1024AL-70T --: 128K x 8 asynchronous SRAM with 70 ns access time, functionally equivalent to the TC554001AF-70 and widely available.
  • CY7C1021CV33-70ZXC --: 64K x 16 high-speed CMOS SRAM with 70 ns speed grade, suitable replacement for the 512K-bit SRAM in similar pinout packages.
  • AS6C1008-55TIN --: 128K x 8 low-power CMOS SRAM, drop-in compatible with 70 ns-class parts and often used as a legacy Toshiba SRAM substitute.
  • CY7C1019DV33-10ZSXI --: 128K x 8 low-power SRAM in a similar package, widely available and commonly used as a drop-in replacement for 70 ns 1Mbit SRAMs.

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