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TC554001AFI-70L from TOSHIBA

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TC554001AFI-70L

Manufacturer: TOSHIBA, TOSH, TOS

524,288-WORD BY 8-BIT STATIC RAM

Partnumber Manufacturer Quantity Availability
TC554001AFI-70L,TC554001AFI70L TOSHIBA, TOSH, TOS 5896 In Stock

Description and Introduction

524,288-WORD BY 8-BIT STATIC RAM The TC554001AFI-70L is a 4Mbit (512K x 8) Static RAM (SRAM) manufactured by Toshiba. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 512K x 8 bits  
- **Operating Voltage:** 3.3V  
- **Access Time:** 70ns  
- **Package Type:** 32-pin TSOP (Thin Small Outline Package)  
- **Operating Temperature Range:** Industrial (-40°C to +85°C)  
- **Standby Current:** Low power consumption in standby mode  
- **I/O Interface:** 3.3V CMOS compatible  

### **Descriptions:**
- The TC554001AFI-70L is a high-speed, low-power SRAM designed for applications requiring fast data access and reliable performance.  
- It is suitable for industrial environments due to its wide operating temperature range.  
- The 3.3V operation makes it compatible with modern low-voltage systems.  

### **Features:**
- **High-Speed Access:** 70ns access time for efficient data retrieval.  
- **Low Power Consumption:** Optimized for power-sensitive applications.  
- **Wide Temperature Range:** Supports industrial-grade operating conditions.  
- **CMOS Technology:** Ensures low power dissipation and high noise immunity.  
- **TSOP Package:** Compact form factor suitable for space-constrained designs.  

This SRAM is commonly used in embedded systems, networking equipment, and industrial control applications.  

*(Source: Toshiba datasheet and product documentation.)*

Application Scenarios & Design Considerations

524,288-WORD BY 8-BIT STATIC RAM

Alternative Part Number

  • IS61C1024AL-70T --: 128K x 8 asynchronous SRAM with 70 ns access time, functionally equivalent to the TC554001AFI-70L and widely available.
  • CY7C1021CV33-70ZXC --: 64K x 16 low-power CMOS SRAM with 70 ns speed grade, suitable replacement for the 4Mbit SRAM in similar pinout packages.
  • AS6C4008-55PCN --: 512K x 8 low-power SRAM with 55 ns access time, drop-in compatible for many 4Mbit asynchronous SRAM applications.
  • AS6C1008-55TIN --: Low-power 128K x 8 CMOS SRAM with compatible pinout and timing margin (55 ns is faster than 70 ns), suitable as an alternative source for the Toshiba part.
  • CY7C1019DV33-10ZSXI --: 128K x 8 low-power SRAM in the same density class; 10 ns speed is faster than 70 ns so timing requirements are met.

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