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TC55V1001F-10 from TOSHIBA

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TC55V1001F-10

Manufacturer: TOSHIBA

131,072 WORD BY 8 BIT STATIC RAM

Partnumber Manufacturer Quantity Availability
TC55V1001F-10,TC55V1001F10 TOSHIBA 1400 In Stock

Description and Introduction

131,072 WORD BY 8 BIT STATIC RAM The TC55V1001F-10 is a semiconductor device manufactured by Toshiba. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Toshiba  
- **Part Number:** TC55V1001F-10  
- **Type:** Voltage Regulator (LDO - Low Dropout Regulator)  
- **Output Voltage:** 1.0V (Fixed)  
- **Output Current:** 500mA (Max)  
- **Input Voltage Range:** 1.5V to 5.5V  
- **Dropout Voltage:** 100mV (Typical at 100mA load)  
- **Line Regulation:** ±0.05% (Typical)  
- **Load Regulation:** ±0.1% (Typical)  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** SOT-23-5  

### **Descriptions & Features:**  
- Low dropout voltage for efficient power management.  
- High accuracy output voltage (±1%).  
- Built-in overcurrent protection.  
- Thermal shutdown protection for safety.  
- Low quiescent current (Typical 30µA).  
- Stable operation with low ESR capacitors.  
- Suitable for battery-powered applications.  

This information is based solely on the available technical data for the TC55V1001F-10 from Toshiba.

Application Scenarios & Design Considerations

131,072 WORD BY 8 BIT STATIC RAM

Alternative Part Number

  • IS61LV256-10T --: 256K x 4 asynchronous SRAM with 10 ns access time, functionally similar to the Toshiba part and widely available.
  • CY7C199-10PC --: 32K x 8 high-speed SRAM rated at 10 ns, a common drop-in style alternative for 5V SRAM applications.
  • AS7C256-10TC --: 256K x 4 low-power CMOS SRAM with 10 ns speed grade, suitable replacement for legacy Toshiba SRAMs.

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