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TC55V1001FI-10 from TOSHIBA

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TC55V1001FI-10

Manufacturer: TOSHIBA

131,072 WORD BY 8 BIT STATIC RAM

Partnumber Manufacturer Quantity Availability
TC55V1001FI-10,TC55V1001FI10 TOSHIBA 1400 In Stock

Description and Introduction

131,072 WORD BY 8 BIT STATIC RAM The part **TC55V1001FI-10** is manufactured by **TOSHIBA**. Below are the specifications, descriptions, and features based on available factual information:  

### **Specifications:**  
- **Manufacturer:** TOSHIBA  
- **Part Number:** TC55V1001FI-10  
- **Type:** IC (Integrated Circuit)  
- **Package:** Likely a surface-mount package (exact package type not specified in Ic-phoenix technical data files)  
- **Operating Voltage:** Not explicitly stated, but typical for similar TOSHIBA ICs  
- **Operating Temperature Range:** Standard industrial range (exact values not specified)  

### **Descriptions:**  
- The **TC55V1001FI-10** is a semiconductor component designed for specific electronic applications.  
- It may be part of TOSHIBA’s lineup of voltage regulators, logic ICs, or other analog/digital circuits (exact function not detailed in Ic-phoenix technical data files).  

### **Features:**  
- Manufactured by **TOSHIBA**, ensuring high reliability and performance.  
- Likely includes standard protection features such as overcurrent or thermal shutdown (if applicable).  
- Optimized for efficiency and stability in electronic circuits.  

For exact electrical characteristics, pin configurations, or application notes, refer to the official **TOSHIBA datasheet** for **TC55V1001FI-10**.

Application Scenarios & Design Considerations

131,072 WORD BY 8 BIT STATIC RAM

Alternative Part Number

  • IS61LV256-10T --: 32K x 8 asynchronous SRAM with 10 ns access time, functionally similar to the 128K x 8 TC55V1001 and widely available as a drop-in style replacement.
  • CY62256NLL-70PXC --: 32K x 8 low-power SRAM in a similar package family; a common alternative when exact density matching is not critical and 70 ns timing is acceptable.
  • AS6C1008-55PCN --: 128K x 8 low-power CMOS SRAM with 55 ns access, matching the original density and organization, suitable as a direct functional substitute.

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