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TC55V16256FTI-12 from TOSHIBA

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TC55V16256FTI-12

Manufacturer: TOSHIBA, TOS, TOSH

262, 144-WORD BY 16-BIT CMOS STATIC RAM

Partnumber Manufacturer Quantity Availability
TC55V16256FTI-12,TC55V16256FTI12 TOSHIBA, TOS, TOSH 3287 In Stock

Description and Introduction

262, 144-WORD BY 16-BIT CMOS STATIC RAM The TC55V16256FTI-12 is a 16M (1M words × 16 bits) CMOS Static RAM (SRAM) manufactured by Toshiba. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 1,048,576 words × 16 bits  
- **Supply Voltage:** 3.3V ± 0.3V  
- **Access Time:** 12 ns (max)  
- **Operating Current:** 80 mA (typical)  
- **Standby Current:** 3 mA (typical in CMOS mode)  
- **Package:** 44-pin TSOP (Thin Small Outline Package)  
- **Operating Temperature Range:** -40°C to +85°C  

### **Descriptions:**
- **Type:** High-speed CMOS SRAM  
- **Functionality:** Fully static operation, no clock or refresh required  
- **Interface:** Common I/O (input/output shared)  
- **Control Signals:**  
  - Chip Enable (CE)  
  - Output Enable (OE)  
  - Write Enable (WE)  
  - Byte Control (LB, UB)  

### **Features:**
- **Low Power Consumption:**  
  - CMOS standby mode reduces power when inactive.  
- **High-Speed Operation:**  
  - 12 ns access time for fast read/write operations.  
- **Wide Voltage Range:**  
  - Supports 3.3V ± 0.3V operation.  
- **Byte Control:**  
  - Lower Byte (LB) and Upper Byte (UB) controls for flexible data access.  
- **Reliable Operation:**  
  - Fully static design ensures stable performance without refresh cycles.  
- **Industry-Standard Pinout:**  
  - Compatible with other 16-bit SRAMs in the same package.  

This SRAM is commonly used in applications requiring high-speed, low-power memory, such as networking equipment, telecommunications, and embedded systems.

Application Scenarios & Design Considerations

262, 144-WORD BY 16-BIT CMOS STATIC RAM

Alternative Part Number

  • IS61LV25616AL-10TLI --: 256K x 16 asynchronous SRAM with comparable 10 ns speed grade and 3.3 V supply, pin-compatible TSOP package, widely available and often used as a drop-in replacement for Toshiba 256Kx16 SRAMs.
  • CY7C1041CV33-10ZXI --: 256K x 16 low-power CMOS SRAM in 3.3 V, 10 ns access time, same organization and similar TSOP II footprint, a well-established alternative when the Toshiba part is unavailable.
  • AS6C62256-55SIN --: 256K x 8 low-power SRAM from Alliance Memory, offered as a legacy SRAM replacement line; suitable when a 256K-depth SRAM with similar timing and 3.3 V/5 V tolerance is acceptable, though bus width differs and should be verified.

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