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TC55V16366FF-150 from TOSHIBA

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TC55V16366FF-150

Manufacturer: TOSHIBA, TOS

524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM

Partnumber Manufacturer Quantity Availability
TC55V16366FF-150,TC55V16366FF150 TOSHIBA, TOS 412 In Stock

Description and Introduction

524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM The TC55V16366FF-150 is a synchronous DRAM (SDRAM) manufactured by Toshiba. Below are the specifications, descriptions, and features based on the available knowledge:

### **Specifications:**  
- **Type:** Synchronous DRAM (SDRAM)  
- **Density:** 16M words × 36 bits (64M words × 18 bits also available)  
- **Organization:**  
  - 16,777,216 words × 36 bits (4 banks)  
  - 33,554,432 words × 18 bits (4 banks)  
- **Supply Voltage:** 3.3V ± 0.3V  
- **Operating Frequency:** 150MHz  
- **Access Time:** 5.4ns (CL=3)  
- **Refresh:** 8,192 cycles / 64ms (Auto Refresh & Self Refresh supported)  
- **Package:** 86-pin Plastic TSOP (II)  

### **Descriptions:**  
- The TC55V16366FF-150 is a high-speed CMOS synchronous DRAM designed for applications requiring large memory capacity and high bandwidth.  
- It supports burst read/write operations and programmable burst lengths (1, 2, 4, 8, or full page).  
- Features four internal banks for efficient memory management.  

### **Features:**  
- **Synchronous Operation:** Clock-controlled commands and data transfer.  
- **Burst Mode Support:** Programmable burst lengths (1, 2, 4, 8, or full page).  
- **Auto Precharge:** Supports auto precharge for improved efficiency.  
- **CAS Latency Options:** Programmable CAS latency (2 or 3).  
- **Low Power Consumption:** Standby and power-down modes available.  
- **Single 3.3V Power Supply:** Compatible with 3.3V systems.  
- **Industrial Temperature Range:** Supports extended operating conditions.  

This information is based on Toshiba’s official documentation for the TC55V16366FF-150 SDRAM. For detailed electrical characteristics and timing diagrams, refer to the datasheet.

Application Scenarios & Design Considerations

524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM

Alternative Part Number

  • IS61LV25616AL-10TLI --: 256K x 16 asynchronous SRAM with similar 3.3V interface and access time, pin-compatible footprint in TSOP, widely available alternative.
  • CY7C1041CV33-10ZXI --: 256K x 16 low-power SRAM at 3.3V with 10 ns speed grade, functionally equivalent to the Toshiba part for most designs.
  • AS6C62256-55SIN --: 32K x 8 low-power CMOS SRAM, suitable drop-in replacement where a narrower bus is acceptable; Alliance specializes in legacy SRAM replacements.
  • IS61LV25616AL-10TL --: 256Kx16 asynchronous SRAM with comparable 10ns speed grade and 3.3V supply, widely available drop-in for 150ns-class 16-bit SRAM sockets.
  • CY7C1041CV33-10ZXC --: 256Kx16 low-power CMOS SRAM at 3.3V with 10ns access, functionally equivalent to the TC55V16366 16-bit SRAM family.

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