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TC55V1664BJ-12 from TOSHIBA

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TC55V1664BJ-12

Manufacturer: TOSHIBA, TOS

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
Partnumber Manufacturer Quantity Availability
TC55V1664BJ-12,TC55V1664BJ12 TOSHIBA, TOS 1445 In Stock

Description and Introduction

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM The TC55V1664BJ-12 is a 16M (1M x 16) CMOS Synchronous DRAM manufactured by Toshiba. Below are its specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 1M words × 16 bits  
- **Memory Capacity:** 16M bits  
- **Operating Voltage:** 3.3V ± 0.3V  
- **Access Time:** 12 ns (CL=3)  
- **Refresh Cycles:** 4096 refresh cycles / 64ms  
- **Package:** 54-pin TSOP (Type II)  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  

### **Descriptions:**
- **Synchronous Operation:** Clock-controlled for high-speed data transfer.  
- **Burst Mode Support:** Programmable burst lengths (1, 2, 4, 8, or full page).  
- **CAS Latency Options:** Supports CAS latencies of 2 or 3.  
- **Auto Refresh & Self Refresh:** Includes both modes for power efficiency.  
- **Single 3.3V Power Supply:** Low power consumption.  

### **Features:**
- **High-Speed Performance:** 12 ns access time (CL=3).  
- **Four-Bank Architecture:** Reduces access conflicts.  
- **Programmable Burst Length:** Enhances flexibility in data transfer.  
- **Low Power Consumption:** Ideal for portable and battery-powered devices.  
- **Compatible with JEDEC Standards:** Ensures industry-standard compliance.  

This DRAM is commonly used in applications requiring high-speed memory, such as networking equipment, embedded systems, and consumer electronics.

Application Scenarios & Design Considerations

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM

Alternative Part Number

  • IS61LV25616AL-10TL --: 16Mbit asynchronous SRAM with similar 256Kx16 organization and 10ns speed, widely available and pin-compatible in many designs.
  • CY7C1041CV33-10ZXC --: 4Mbit fast asynchronous SRAM in 256Kx16 configuration with comparable access time, suitable functional replacement with minor timing differences.
  • AS6C62256-55SIN --: Low-power 256Kx8 SRAM from a vendor known for legacy SRAM replacements; can substitute in designs tolerant of x8 organization and slower 55ns access.
  • IS61LV1664-12T --: 64K x 16 asynchronous SRAM with 12 ns access time, functionally compatible with the TC55V1664BJ-12 and widely available.
  • CY7C1064-12ZC --: 64K x 16 low-power SRAM with 12 ns speed grade, pin-compatible replacement for the Toshiba part.
  • AS7C1664-12TC --: Direct drop-in 64K x 16 SRAM alternative with 12 ns access time, often used as a second source for Toshiba SRAMs.

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