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TC55V4326FF-133 from TOSHIBA

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TC55V4326FF-133

Manufacturer: TOSHIBA, TOSH

131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM

Partnumber Manufacturer Quantity Availability
TC55V4326FF-133,TC55V4326FF133 TOSHIBA, TOSH 4932 In Stock

Description and Introduction

131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM The part **TC55V4326FF-133** is a **4M x 32-bit (128Mb) Synchronous DRAM (SDRAM)** module. Below are its key specifications, descriptions, and features:  

### **Manufacturer Specifications:**  
- **Density:** 128Mb (4M words × 32 bits)  
- **Organization:** 4 banks × 1M words × 32 bits  
- **Voltage Supply:** 3.3V ± 0.3V  
- **Speed Grade:** **-133** (7.5ns access time, 133MHz operation)  
- **Interface:** Synchronous (clocked)  
- **Package:** 86-pin TSOP (Thin Small Outline Package)  
- **Refresh Mode:** Auto-refresh & self-refresh  
- **Burst Length:** Programmable (1, 2, 4, 8, or full page)  
- **CAS Latency (CL):** 2 or 3 cycles  

### **Descriptions:**  
- Designed for high-performance memory applications requiring fast data access.  
- Supports **burst read and write operations** for efficient data transfer.  
- **Fully compatible** with JEDEC-standard SDRAM specifications.  

### **Features:**  
- **Synchronous operation** with a single 3.3V power supply.  
- **Internal pipelined architecture** for high-speed data processing.  
- **Auto precharge** function for improved efficiency.  
- **Programmable burst length** for flexible data access.  
- **Low-power standby and sleep modes** for power-sensitive applications.  
- **Industrial temperature range** support (if applicable).  

This SDRAM is commonly used in **embedded systems, networking devices, and computing applications** requiring reliable, high-speed memory.  

Would you like additional details on pin configurations or timing diagrams?

Application Scenarios & Design Considerations

131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM

Alternative Part Number

  • IS61LV25616AL-10TL --: 256K x 16 asynchronous SRAM with comparable speed grade and 3.3V supply, commonly used as a drop-in replacement for Toshiba SRAMs.
  • CY7C1041CV33-10ZXI --: 256K x 16 low-power SRAM at 3.3V with 10ns access time, functionally equivalent and widely available.
  • AS7C34096A-10TIN --: 512K x 8 SRAM in the same 3.3V family, offered as a legacy Toshiba SRAM replacement with similar timing.
  • IS61LV25616AL-10TLI --: 256K x 16 asynchronous SRAM with comparable 3.3V interface and speed grade; widely available and pin-compatible in function for similar buffering/cache roles.
  • AS6C4008-55TIN --: 4Mbit (512K x 8) low-power SRAM in TSOP package; suitable when byte-wide organization is acceptable and a long-lifecycle legacy SRAM source is needed.
  • CY7C1041CV33-10ZXC --: 256Kx16 low-power SRAM at 3.3V with 10ns access, suitable replacement for the TC55V4326 in most designs.
  • AS7C34096A-10TCN --: 512Kx8 SRAM alternative with similar voltage and speed; can substitute where organization flexibility is acceptable.

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