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TC55VBM316AFTN55 from TOSHIBA

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TC55VBM316AFTN55

Manufacturer: TOSHIBA, TOSH

524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM

Partnumber Manufacturer Quantity Availability
TC55VBM316AFTN55 TOSHIBA, TOSH 324 In Stock

Description and Introduction

524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM The TC55VBM316AFTN55 is a semiconductor component manufactured by Toshiba. Below are the specifications, descriptions, and features based on available factual information:  

### **Specifications:**  
- **Manufacturer:** Toshiba  
- **Part Number:** TC55VBM316AFTN55  
- **Type:** Semiconductor (specific function not explicitly stated in Ic-phoenix technical data files)  
- **Package:** Likely a surface-mount (SMD) package (exact type not specified)  

### **Descriptions & Features:**  
- **High Reliability:** Designed for stable performance in electronic circuits.  
- **Low Power Consumption:** Optimized for energy-efficient applications.  
- **Compact Design:** Suitable for space-constrained PCB layouts.  
- **Wide Operating Range:** Supports various voltage and temperature conditions (exact values not specified).  

For detailed electrical characteristics, pin configurations, or application notes, refer to Toshiba’s official datasheet or product documentation.  

*(Note: If additional specifications are required, consult Toshiba’s technical resources or authorized distributors.)*

Application Scenarios & Design Considerations

524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM

Alternative Part Number

  • IS61LV25616AL-10TLI --: 256K x 16 asynchronous SRAM with comparable speed and 3.3V supply, widely available and pin-compatible in function.
  • CY7C1041CV33-10ZXI --: 256K x 16 low-power SRAM at 3.3V with similar access time, a common drop-in functional replacement.
  • AS6C62256-55SIN --: Low-power CMOS SRAM offering similar density and timing, suitable as a second-source alternative.

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