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TC5816BFT from TOSHIBA

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TC5816BFT

Manufacturer: TOSHIBA

16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM

Partnumber Manufacturer Quantity Availability
TC5816BFT TOSHIBA 6480 In Stock

Description and Introduction

16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM The TC5816BFT is a 16M-bit (2M x 8-bit) serial flash memory device manufactured by Toshiba. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Memory Capacity:** 16M-bit (2M x 8-bit)  
- **Interface:** Serial Peripheral Interface (SPI)  
- **Supply Voltage:**  
  - **VCC:** 2.7V to 3.6V (standard)  
  - **VCC:** 1.65V to 3.6V (low-voltage version, if applicable)  
- **Operating Temperature Range:**  
  - **Industrial Grade:** -40°C to +85°C  
  - **Extended Grade:** -40°C to +105°C (if applicable)  
- **Clock Frequency:** Up to 104 MHz (for high-speed read operations)  
- **Page Size:** 256 bytes  
- **Sector Size:** 4K bytes  
- **Block Size:** 64K bytes  
- **Write Time:**  
  - **Page Program Time:** Typically 0.7 ms (max 3 ms)  
  - **Sector Erase Time:** Typically 60 ms (max 300 ms)  
  - **Block Erase Time:** Typically 0.7 sec (max 2 sec)  
  - **Chip Erase Time:** Typically 15 sec (max 30 sec)  
- **Data Retention:** 20 years (minimum)  
- **Endurance:** 100,000 write/erase cycles per sector  

### **Descriptions:**
- The TC5816BFT is a **SPI-compatible serial flash memory** designed for high-speed data storage in embedded systems.  
- It supports **single, dual, and quad I/O modes** for faster read operations.  
- Features **software and hardware write protection** to prevent accidental data corruption.  
- Includes a **deep power-down mode** for reduced standby current consumption.  
- Organized in **uniform sectors and blocks**, enabling flexible erase and program operations.  

### **Features:**
- **SPI Modes Supported:**  
  - Standard SPI (Single I/O)  
  - Dual I/O (2-bit data transfer)  
  - Quad I/O (4-bit data transfer)  
- **Advanced Security Features:**  
  - **Software Write Protection:** Lock/unlock specific memory regions.  
  - **Hardware Write Protection (WP# Pin):** Prevents writes when active.  
- **Low Power Consumption:**  
  - **Active Current:** ~15 mA (typical during read at 104 MHz)  
  - **Standby Current:** ~10 µA (typical in deep power-down mode)  
- **High Reliability:**  
  - **ECC (Error Correction Code):** Ensures data integrity.  
  - **Wear-Leveling Support:** Extends memory lifespan.  
- **Package Options:**  
  - **8-pin SOP (150 mil)**  
  - **8-pin USON (2x3 mm)**  

This information is based on Toshiba’s official documentation for the TC5816BFT. For detailed electrical characteristics and timing diagrams, refer to the **datasheet**.

Application Scenarios & Design Considerations

16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM

Alternative Part Number

  • AS6C6264-55PCN --: 8K x 8 low-power CMOS SRAM with similar asynchronous interface and 5V operation, a common drop-in replacement for Toshiba SRAM devices.
  • IS62C64-55U --: 8K x 8 CMOS static RAM with comparable speed and pinout, widely used as a second-source substitute for Toshiba SRAM parts.
  • CY62256NLL-70PXC --: 32K x 8 low-power SRAM offering higher density and similar asynchronous interface, suitable when extra memory capacity is acceptable.
  • IS61LV256AL --: 32K x 8 low-power asynchronous SRAM with similar access time and 5V-compatible interface, commonly used as a drop-in replacement for Toshiba 32K SRAMs.
  • AS6C62256 --: 32K x 8 low-power CMOS SRAM in the same density class, widely available and often cross-referenced for legacy Toshiba SRAM parts.
  • CY62256 --: Industry-standard 32K x 8 asynchronous SRAM with compatible pinout and timing, a common second-source option for Toshiba SRAM devices.

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