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TG2200AF from TOSHIBA

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TG2200AF

Manufacturer: TOSHIBA

RF Cell Packs
Partnumber Manufacturer Quantity Availability
TG2200AF TOSHIBA 39000 In Stock

Description and Introduction

RF Cell Packs The part **TG2200AF** is manufactured by **TOSHIBA**.  

### **Specifications:**  
- **Type:** IGBT (Insulated Gate Bipolar Transistor) module  
- **Voltage Rating:** 1200V  
- **Current Rating:** 200A  
- **Package Type:** Module  
- **Configuration:** Dual IGBT with diode  

### **Descriptions:**  
- Designed for high-power switching applications  
- Suitable for inverters, motor drives, and industrial power systems  
- Features low switching losses and high efficiency  

### **Features:**  
- **High Voltage & Current Handling:** 1200V/200A rating  
- **Low Saturation Voltage:** Reduces conduction losses  
- **Fast Switching Speed:** Enhances performance in high-frequency applications  
- **Built-in Diode:** Includes freewheeling diode for protection  
- **Isolated Base Plate:** Ensures electrical isolation for safety  

This module is commonly used in power electronics applications requiring robust and efficient switching.

Application Scenarios & Design Considerations

RF Cell Packs

Alternative Part Number

  • 2SC5200 --: High-power NPN transistor in a different series, commonly used as a substitute for the TG2200AF in audio and power switching applications with similar voltage and current ratings.
  • MJ15003 --: Rugged NPN power transistor from a different series offering comparable current and power handling, suitable as a replacement where the TG2200AF is used in amplifier output stages.
  • 2N3055 --: Widely available NPN power transistor with a different naming series, providing a low-cost general-purpose alternative for many circuits that use the TG2200AF.

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