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TIP105TU from FAIRCHILD,Fairchild Semiconductor

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TIP105TU

Manufacturer: FAIRCHILD

PNP Epitaxial Silicon Darlington Transistor

Partnumber Manufacturer Quantity Availability
TIP105TU FAIRCHILD 1000 In Stock

Description and Introduction

PNP Epitaxial Silicon Darlington Transistor The TIP105TU is a PNP Darlington transistor manufactured by FAIRCHILD Semiconductor.  

### **Specifications:**  
- **Type:** PNP Darlington Transistor  
- **Collector-Emitter Voltage (VCE):** 60V  
- **Collector-Base Voltage (VCB):** 60V  
- **Emitter-Base Voltage (VEB):** 5V  
- **Continuous Collector Current (IC):** 5A  
- **Peak Collector Current (ICM):** 8A  
- **Power Dissipation (PD):** 65W  
- **DC Current Gain (hFE):** 1000 (min) at IC = 3A  
- **Operating Junction Temperature (TJ):** -65°C to +150°C  
- **Package:** TO-220  

### **Descriptions and Features:**  
- Designed for general-purpose amplifier and low-speed switching applications.  
- High DC current gain (hFE) for improved efficiency.  
- Built-in base-emitter shunt resistors for stable operation.  
- Suitable for motor control, power regulation, and relay driving.  
- TO-220 package provides good thermal performance.  

This information is based on FAIRCHILD's datasheet for the TIP105TU transistor.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Darlington Transistor
Partnumber Manufacturer Quantity Availability
TIP105TU FAIRCHIL 427 In Stock

Description and Introduction

PNP Epitaxial Silicon Darlington Transistor The TIP105TU is a PNP Darlington transistor manufactured by FAIRCHILD (now ON Semiconductor). Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:  

### **Specifications:**  
- **Type:** PNP Darlington Transistor  
- **Collector-Emitter Voltage (VCE):** -60V  
- **Collector-Base Voltage (VCB):** -60V  
- **Emitter-Base Voltage (VEB):** -5V  
- **Collector Current (IC):** -5A (continuous)  
- **Peak Collector Current (ICM):** -8A  
- **Power Dissipation (PD):** 65W (at 25°C)  
- **DC Current Gain (hFE):** 1000 (min) at IC = -3A  
- **Operating Junction Temperature (TJ):** -65°C to +150°C  
- **Storage Temperature (Tstg):** -65°C to +150°C  

### **Description:**  
The TIP105TU is a high-power PNP Darlington transistor designed for general-purpose amplifier and switching applications. It features a high current gain and low saturation voltage, making it suitable for driving high-current loads in power supply circuits, motor control, and relay drivers.  

### **Features:**  
- High DC current gain (hFE ≥ 1000)  
- Low saturation voltage  
- High current capability (up to 5A continuous)  
- TO-220 package for easy mounting  
- Suitable for power amplification and switching applications  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

PNP Epitaxial Silicon Darlington Transistor

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