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TJ60S06M3L from Toshiba

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TJ60S06M3L

Manufacturer: Toshiba

Power MOSFET (P-ch single)

Partnumber Manufacturer Quantity Availability
TJ60S06M3L Toshiba 30000 In Stock

Description and Introduction

Power MOSFET (P-ch single) The part **TJ60S06M3L** is manufactured by **Toshiba**. Below are the factual specifications, descriptions, and features based on available information:  

### **Specifications:**  
- **Type:** IGBT Module  
- **Voltage Rating:** 600V  
- **Current Rating:** 60A  
- **Configuration:** Single IGBT with diode  
- **Package Type:** Module  
- **Mounting Style:** Chassis Mount  

### **Descriptions:**  
- Designed for high-efficiency power switching applications.  
- Suitable for motor control, inverters, and industrial power systems.  
- Includes a built-in freewheeling diode for protection.  

### **Features:**  
- Low saturation voltage for reduced power loss.  
- High-speed switching capability.  
- Robust thermal performance with an isolated base plate.  
- Compact and durable module construction.  

For exact technical details, refer to Toshiba’s official datasheet.

Application Scenarios & Design Considerations

Power MOSFET (P-ch single)

Alternative Part Number

  • IRF9Z34NPBF --: P-channel MOSFET with comparable voltage and current ratings, widely available and pin-compatible in many designs.
  • FQP47P06 --: P-channel MOSFET rated around -60V/-47A, suitable replacement for similar power switching applications.
  • STP60NF06 --: N-channel MOSFET with similar current capability; verify channel polarity and circuit topology before use.

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