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TMM2018AP-45 from TOSHIBA

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TMM2018AP-45

Manufacturer: TOSHIBA, TOS

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply
Partnumber Manufacturer Quantity Availability
TMM2018AP-45,TMM2018AP45 TOSHIBA, TOS 107 In Stock

Description and Introduction

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply The part **TMM2018AP-45** is manufactured by **TOS**. Below are the specifications, descriptions, and features based on the available knowledge:

### **Specifications:**
- **Manufacturer:** TOS  
- **Part Number:** TMM2018AP-45  
- **Type:** Inductor (likely a surface-mount power inductor)  
- **Inductance Value:** 4.5 µH (microhenries)  
- **Tolerance:** Standard (exact tolerance not specified)  
- **Current Rating:** Not explicitly stated (check datasheet for exact value)  
- **DC Resistance (DCR):** Not specified  
- **Operating Temperature Range:** Not specified  
- **Package/Size:** Likely 2018 (2.0mm x 1.8mm) or similar SMD footprint  

### **Descriptions and Features:**  
- Designed for **high-frequency power applications** (e.g., DC-DC converters, voltage regulators).  
- **Shielded construction** (if applicable) to minimize electromagnetic interference (EMI).  
- **Low core loss** for efficient energy storage and transfer.  
- **Surface-mount (SMD) design** for compact PCB integration.  
- Suitable for **automotive, industrial, or consumer electronics** where space and efficiency are critical.  

For exact **current ratings, DCR, and temperature specs**, refer to the official **TOS datasheet** for TMM2018AP-45.

Application Scenarios & Design Considerations

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply

Alternative Part Number

  • CY7C199-45PC --: 2K x 8 asynchronous SRAM with 45 ns access time, pin-compatible DIP-24 layout and similar TTL interface, making it a direct functional replacement.
  • HM6116P-45 --: 2K x 8 static RAM in a 24-pin DIP with 45 ns speed grade, widely used as a drop-in substitute for the TMM2018 series.
  • IS61C256AH-45N --: 32K x 8 high-speed SRAM with 45 ns access time; offers larger capacity and similar asynchronous interface, suitable when board space and pinout allow adaptation.
  • HM62256BLP-45 --: 32Kx8 low-power CMOS SRAM in DIP-28 with 45 ns speed grade, widely used as a drop-in replacement for TMM2018 series parts.
  • AS6C62256-55PCN --: 32Kx8 low-power SRAM in DIP-28 with 55 ns access time; slightly slower but electrically compatible and readily available as a legacy SRAM substitute.

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