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TPCA8108 from TOSHIBA-PB,TOSHIBA

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TPCA8108

Manufacturer: TOSHIBA-PB, TOSHIBA

Power MOSFET (P-ch single)

Partnumber Manufacturer Quantity Availability
TPCA8108 TOSHIBA-PB, TOSHIBA 3978 In Stock

Description and Introduction

Power MOSFET (P-ch single) The TPCA8108 is a P-channel MOSFET manufactured by TOSHIBA. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGSS):** ±20V  
- **Drain Current (ID):** -8A  
- **Power Dissipation (PD):** 2W (at Ta = 25°C)  
- **Operating Junction Temperature (Tj):** -55°C to 150°C  
- **On-Resistance (RDS(ON)):**  
  - 35mΩ (max) at VGS = -10V  
  - 45mΩ (max) at VGS = -4.5V  

### **Descriptions:**  
- The TPCA8108 is a P-channel MOSFET designed for power management applications.  
- It is optimized for low on-resistance and high-speed switching performance.  
- Suitable for load switching, power supply circuits, and battery management.  

### **Features:**  
- **Low On-Resistance:** Ensures efficient power handling with minimal losses.  
- **Compact Package:** Available in a small surface-mount package (e.g., SOP-8).  
- **High-Speed Switching:** Designed for fast switching applications.  
- **Low Gate Drive Voltage:** Operates efficiently at -4.5V or -10V gate drive.  

For detailed datasheet information, refer to TOSHIBA's official documentation.

Application Scenarios & Design Considerations

Power MOSFET (P-ch single)

Alternative Part Number

  • CSD17578Q5A --: N-channel MOSFET in a similar 5x6 QFN package with comparable RDS(on) and voltage rating, suitable as a drop-in replacement in most switching applications.
  • NVMFS5C410NL --: Low RDS(on) N-channel power MOSFET in a similar DFN5 package, offering comparable current handling and thermal performance.
  • BSC0902NSI --: OptiMOS N-channel MOSFET in a similar power package with comparable voltage and on-resistance characteristics for switching power designs.

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