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TPCC8003-H from TOSHIBA Pb-free,TOSHIBA

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TPCC8003-H

Manufacturer: TOSHIBA Pb-free, TOSHIBAPb

Power MOSFET (N-ch single VDSS≤30V)
Partnumber Manufacturer Quantity Availability
TPCC8003-H,TPCC8003H TOSHIBA Pb-free, TOSHIBAPb 210000 In Stock

Description and Introduction

Power MOSFET (N-ch single VDSS≤30V) The part **TPCC8003-H** is manufactured by **TOSHIBA**. Below are the factual details from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** TOSHIBA  
- **Part Number:** TPCC8003-H  

### **Descriptions:**  
- The TPCC8003-H is a power semiconductor device, likely a power module or IGBT (Insulated Gate Bipolar Transistor) module, designed for high-power applications.  

### **Features:**  
- High power handling capability  
- Robust construction for industrial applications  
- Suitable for motor control, power conversion, and other high-voltage/high-current uses  

For exact electrical characteristics, pin configurations, or application notes, refer to the official **TOSHIBA datasheet** for TPCC8003-H.

Application Scenarios & Design Considerations

Power MOSFET (N-ch single VDSS≤30V)

Alternative Part Number

  • CSD17578Q5A --: N-channel MOSFET in a 5x6 QFN package with comparable RDS(on) and voltage rating, suitable for power switching applications.
  • SIR826DP-T1-GE3 --: Power MOSFET in PowerPAK SO-8 with similar on-resistance and current capability, a common cross for Toshiba 8-pin power MOSFETs.
  • BSC0902NSI --: OptiMOS N-channel MOSFET in SuperSO8 with low RDS(on) and similar ratings, usable as a drop-in style alternative in power conversion circuits.
  • CSD17573Q5B --: N-channel NexFET power MOSFET in a 5x6 SON package with comparable low RDS(on) and voltage rating, suitable for the same switching applications.
  • SIR802DP-T1-GE3 --: TrenchFET power MOSFET with comparable voltage and current handling in a PowerPAK SO-8 package, usable as an alternative for similar power switching designs.

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