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TPCC8A01-H from TOSHIBA

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TPCC8A01-H

Manufacturer: TOSHIBA, TOS

Power MOSFET (N-ch single VDSS≤30V)
Partnumber Manufacturer Quantity Availability
TPCC8A01-H,TPCC8A01H TOSHIBA, TOS 26072 In Stock

Description and Introduction

Power MOSFET (N-ch single VDSS≤30V) The part TPCC8A01-H is manufactured by TOSHIBA. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** TOSHIBA  
- **Part Number:** TPCC8A01-H  
- **Type:** IGBT (Insulated Gate Bipolar Transistor) Module  
- **Voltage Rating:** High voltage (specific value not provided in Ic-phoenix technical data files)  
- **Current Rating:** High current (specific value not provided in Ic-phoenix technical data files)  
- **Package Type:** Module  

### **Descriptions:**  
- Designed for power switching applications.  
- Suitable for industrial and high-power electronic systems.  

### **Features:**  
- High efficiency and reliability.  
- Robust construction for demanding applications.  
- Low switching losses.  

For detailed electrical characteristics, refer to the official TOSHIBA datasheet.

Application Scenarios & Design Considerations

Power MOSFET (N-ch single VDSS≤30V)

Alternative Part Number

  • CSD17578Q3A --: N-channel MOSFET in a similar 30V class and low on-resistance, suitable replacement for switching and power management applications.
  • NVMFS5C410NL --: 30V N-channel power MOSFET with comparable RDS(on) and current rating, drop-in candidate for load switch and DC-DC use.
  • BSC0902NSI --: OptiMOS N-channel MOSFET with similar voltage and low on-resistance, widely available alternative for power switching circuits.
  • SIR826ADP-T1-GE3 --: 30V N-channel TrenchFET in PowerPAK SO-8 with comparable on-resistance and current rating, widely available and electrically similar to the original Toshiba part.

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