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TPCS8208 from TOSHIBA

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TPCS8208

Manufacturer: TOSHIBA, TOSHIBA-PB

Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications
Partnumber Manufacturer Quantity Availability
TPCS8208 TOSHIBA, TOSHIBA-PB 144000 In Stock

Description and Introduction

Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications The TPCS8208 is a P-channel MOSFET manufactured by Toshiba. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGSS):** ±20V  
- **Drain Current (ID):** -8.0A (continuous)  
- **Power Dissipation (PD):** 2.5W (at 25°C)  
- **On-Resistance (RDS(ON)):**  
  - 28mΩ (max) at VGS = -10V  
  - 35mΩ (max) at VGS = -4.5V  
- **Threshold Voltage (VGS(th)):** -1.0V to -2.5V  
- **Operating Junction Temperature (Tj):** -55°C to +150°C  
- **Package:** SOP-8 (Small Outline Package)  

### **Descriptions:**  
- The TPCS8208 is a P-channel power MOSFET designed for high-efficiency switching applications.  
- It is optimized for low on-resistance and fast switching performance.  
- Suitable for power management in portable devices, battery protection circuits, and DC-DC converters.  

### **Features:**  
- Low on-resistance for reduced conduction losses.  
- Fast switching speed for improved efficiency.  
- Compact SOP-8 package for space-saving designs.  
- Suitable for load switching and power distribution applications.  

For detailed electrical characteristics, refer to Toshiba's official datasheet.

Application Scenarios & Design Considerations

Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications

Alternative Part Number

  • CSD17578Q5A --: N-channel NexFET in a 5x6 QFN with comparable 30V rating and low RDS(on), a common drop-in for Toshiba SOP-8 MOSFETs in load-switch and DC-DC designs.
  • SI4436DY --: 30V N-channel MOSFET in SO-8 with similar on-resistance and gate charge, widely available and electrically close to the TPCS8208 for switching applications.
  • FDS8880 --: 30V N-channel MOSFET in SO-8 offering comparable current handling and RDS(on), suitable as a second-source replacement when layout and gate drive match.
  • SiR826DP --: 30V N-channel MOSFET in PowerPAK SO-8 with similar on-resistance and current capability, a common drop-in for Toshiba TPCS-series parts.
  • BSC0902NSI --: OptiMOS N-channel MOSFET in SuperSO8 with comparable voltage and low RDS(on), usable as an alternative in synchronous buck and load-switch designs.
  • SI7386DP --: Power MOSFET with similar RDS(on) and voltage class in a PowerPAK package, offering comparable performance for load switching and DC-DC conversion.

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