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TPD4103K

Manufacturer: TOSHIBA, TOSHIBA-PB

Intelligent power device 500V (High voltage PWM DC brushless motor driver)

Partnumber Manufacturer Quantity Availability
TPD4103K TOSHIBA, TOSHIBA-PB 655 In Stock

Description and Introduction

Intelligent power device 500V (High voltage PWM DC brushless motor driver) The TPD4103K is a power MOSFET transistor manufactured by Toshiba. Here are its specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.03Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2.0V (min) to 4.0V (max)  
- **Input Capacitance (Ciss):** 1500pF (typ)  
- **Output Capacitance (Coss):** 500pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 35ns (typ)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**  
The TPD4103K is a high-performance N-channel power MOSFET designed for switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.

### **Features:**  
- Low on-resistance (RDS(on)) for reduced conduction losses  
- High-speed switching performance  
- Low gate drive requirements  
- Avalanche energy specified for ruggedness  
- TO-220AB package for efficient heat dissipation  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

Intelligent power device 500V (High voltage PWM DC brushless motor driver)

Alternative Part Number

  • STGD3NB60K --: 600V N-channel IGBT in TO-252 (DPAK) with integrated freewheeling diode, functionally similar to the TPD4103K for switching applications.
  • IRG4RC10K --: 600V IGBT in DPAK package with fast switching characteristics, suitable as a drop-in style replacement in similar power circuits.
  • FGD3N60L --: 600V N-channel IGBT in TO-252 with logic-level gate drive and built-in diode, offering comparable ratings and package compatibility.
  • FGD3N60LSD --: 600V N-channel IGBT in TO-252 with co-packaged diode, comparable ratings and package, offering a distinct series as an alternative source.
  • STGB10NB37LZ --: Similar 10A/600V-class IGBT in TO-220 package with integrated freewheeling diode, suitable for the same switching applications.
  • IRG4BC20UD --: 600V ultrafast IGBT rated around 10A in TO-220, comparable switching characteristics and package for drop-in evaluation.
  • FGA25N120ANTD --: Higher-current 1200V IGBT with co-pack diode in TO-220; usable where extra voltage/current margin is acceptable, though gate drive and losses should be verified.

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