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TS6B06G from TSC

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TS6B06G

Manufacturer: TSC

Single Phase 6.0 Amps. Glass Passivated Bridge Rectifiers

Partnumber Manufacturer Quantity Availability
TS6B06G TSC 158 In Stock

Description and Introduction

Single Phase 6.0 Amps. Glass Passivated Bridge Rectifiers The TS6B06G is a semiconductor component manufactured by TSC (Taiwan Semiconductor). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**
- **Type:** Schottky Barrier Diode  
- **Package:** SOD-123  
- **Maximum Reverse Voltage (VR):** 60V  
- **Average Forward Current (IF):** 0.5A  
- **Peak Forward Surge Current (IFSM):** 15A  
- **Forward Voltage Drop (VF):** 0.55V (at 0.5A)  
- **Reverse Leakage Current (IR):** 0.5mA (at 60V)  
- **Operating Temperature Range:** -65°C to +125°C  

### **Descriptions:**
- The TS6B06G is a Schottky diode designed for high-efficiency rectification in low-voltage, high-frequency applications.  
- It is commonly used in power supplies, DC-DC converters, and reverse polarity protection circuits.  
- The SOD-123 package provides a compact footprint suitable for space-constrained designs.  

### **Features:**
- **Low Forward Voltage Drop:** Enhances power efficiency.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **High Surge Current Capability:** Ensures reliability under transient conditions.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

For exact performance characteristics, refer to the official TSC datasheet.

Partnumber Manufacturer Quantity Availability
TS6B06G 20 In Stock

Description and Introduction

Single Phase 6.0 Amps. Glass Passivated Bridge Rectifiers The TS6B06G is a semiconductor device manufactured by Toshiba. Here are the factual details from Ic-phoenix technical data files:

### **Manufacturer Specifications:**
- **Manufacturer:** Toshiba  
- **Type:** N-channel MOSFET  
- **Package:** SOP-8  
- **Maximum Drain-Source Voltage (VDSS):** 60V  
- **Maximum Continuous Drain Current (ID):** 6A  
- **Power Dissipation (PD):** 2W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.06Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min), 2.5V (max)  

### **Descriptions:**
- The TS6B06G is a power MOSFET designed for high-efficiency switching applications.  
- It features low on-resistance and fast switching performance.  
- Suitable for DC-DC converters, motor control, and power management circuits.  

### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching Speed:** Enhances efficiency in high-frequency applications.  
- **Compact SOP-8 Package:** Space-saving design for PCB mounting.  
- **High Voltage Tolerance:** Supports up to 60V drain-source voltage.  
- **Low Gate Drive Requirements:** Operates efficiently with low gate voltage.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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