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15.625ms

UPA1706G-E1

Nch enhancement type power MOS FET

Partnumber Manufacturer Quantity Availability
UPA1706G-E1,UPA1706GE1 2460 In Stock

Description and Introduction

Nch enhancement type power MOS FET The UPA1706G-E1 is a high-frequency, high-gain, low-noise amplifier (LNA) designed for use in RF applications. Below are its key specifications, descriptions, and features based on factual information:  

### **Manufacturer:**  
- **NEC Electronics (now part of Renesas Electronics Corporation)**  

### **Specifications:**  
- **Frequency Range:** 50 MHz to 6 GHz  
- **Gain:** 15 dB (typical)  
- **Noise Figure:** 1.5 dB (typical)  
- **Input/Output Impedance:** 50 Ω  
- **Supply Voltage (VCC):** 3 V  
- **Current Consumption:** 15 mA (typical)  
- **Package:** SOT-343 (4-pin)  

### **Descriptions:**  
- The UPA1706G-E1 is a wideband LNA optimized for high-frequency applications, including mobile communication, wireless infrastructure, and RF front-end modules.  
- It provides stable performance with low noise and high gain across a broad frequency range.  

### **Features:**  
- **Low Noise:** Designed for minimal signal degradation.  
- **High Gain:** Ensures strong signal amplification.  
- **Wideband Operation:** Supports frequencies from 50 MHz to 6 GHz.  
- **Low Power Consumption:** Efficient for battery-operated devices.  
- **Small Form Factor:** Compact SOT-343 package for space-constrained designs.  

This information is based on the manufacturer's datasheet and technical documentation. For detailed performance curves and application notes, refer to official Renesas/NEC resources.

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