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UPA1707G-E1

Nch enhancement type power MOS FET

Partnumber Manufacturer Quantity Availability
UPA1707G-E1,UPA1707GE1 2500 In Stock

Description and Introduction

Nch enhancement type power MOS FET The part **UPA1707G-E1** is a **high-side power switch IC** manufactured by **Renesas Electronics**. Below are its specifications, descriptions, and features:

### **Specifications:**
- **Input Voltage Range:** 4.5V to 36V  
- **Output Current:** Up to 2A (continuous)  
- **On-Resistance (RDS(ON)):** 90mΩ (typical)  
- **Operating Temperature Range:** -40°C to +125°C  
- **Package:** SOP-8 (Small Outline Package)  
- **Protection Features:** Overcurrent protection (OCP), thermal shutdown (TSD), and reverse current blocking  

### **Descriptions:**
- The **UPA1707G-E1** is designed for **high-side power switching applications** in automotive, industrial, and consumer electronics.  
- It integrates a **P-channel MOSFET** with low on-resistance for efficient power management.  
- The device is **AEC-Q100 qualified**, making it suitable for automotive applications.  

### **Features:**
- **Wide input voltage range (4.5V–36V)**  
- **Low quiescent current** in standby mode  
- **Fast turn-on/off response**  
- **Built-in protection functions** (OCP, TSD)  
- **Reverse current blocking** to prevent damage  
- **Compact SOP-8 package** for space-constrained designs  

This IC is commonly used in **power distribution, load switching, and battery management systems**.  

Let me know if you need further details.

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