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UPA1717G-E2 from NEC

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UPA1717G-E2

Manufacturer: NEC

P-channel enhancement type power MOS FET

Partnumber Manufacturer Quantity Availability
UPA1717G-E2,UPA1717GE2 NEC 4100 In Stock

Description and Introduction

P-channel enhancement type power MOS FET The part **UPA1717G-E2** is manufactured by **NEC**.  

### **Specifications:**  
- **Type:** Dual N-channel MOSFET  
- **Package:** SOP-8  
- **Voltage Rating (VDS):** 20V  
- **Current Rating (ID):** 6A  
- **On-Resistance (RDS(on)):** 0.025Ω (typical)  
- **Gate Threshold Voltage (VGS(th)):** 1V (typical)  
- **Power Dissipation (PD):** 2W  

### **Descriptions:**  
The **UPA1717G-E2** is a dual N-channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in portable devices, DC-DC converters, and load switches.  

### **Features:**  
- Low on-resistance for reduced power loss  
- Fast switching speed  
- Dual N-channel configuration in a compact SOP-8 package  
- Suitable for battery-powered applications  
- Lead-free and RoHS compliant  

For detailed electrical characteristics and application notes, refer to the official NEC datasheet.

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