IC Phoenix logo

Home ›  U  › U18 > UPA1721G-E1

UPA1721G-E1 from

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

0.000ms

UPA1721G-E1

N-channel enhancement type power MOS FET

Partnumber Manufacturer Quantity Availability
UPA1721G-E1,UPA1721GE1 2500 In Stock

Description and Introduction

N-channel enhancement type power MOS FET The part **UPA1721G-E1** is a **GaAs SPDT Switch IC** manufactured by **Renesas Electronics Corporation**.  

### **Key Specifications:**  
- **Type:** GaAs SPDT (Single Pole Double Throw) Switch IC  
- **Frequency Range:** DC to 3 GHz  
- **Insertion Loss:** 0.5 dB (typical at 2 GHz)  
- **Isolation:** 25 dB (typical at 2 GHz)  
- **Input Power Handling:** 30 dBm (typical)  
- **Control Voltage:** 0/+3 V (compatible with CMOS logic)  
- **Package:** 6-pin UDFN (Ultra-thin Dual Flat No-lead)  
- **Operating Temperature Range:** -40°C to +85°C  

### **Features:**  
- Low insertion loss and high isolation  
- High power handling capability  
- CMOS logic-compatible control voltage  
- Small form factor (suitable for compact designs)  
- RoHS compliant  

### **Applications:**  
- RF switching in wireless communication systems  
- Mobile devices (smartphones, tablets)  
- IoT and wearable devices  
- Test and measurement equipment  

This information is based on the manufacturer's datasheet and technical documentation.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips