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UPA1724G-E1 from NEC

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UPA1724G-E1

Manufacturer: NEC

N-channel enhancement type power MOS FET

Partnumber Manufacturer Quantity Availability
UPA1724G-E1,UPA1724GE1 NEC 2500 In Stock

Description and Introduction

N-channel enhancement type power MOS FET **Manufacturer:** NEC  
**Part Number:** UPA1724G-E1  

### **Specifications:**  
- **Type:** Dual Operational Amplifier (Op-Amp)  
- **Supply Voltage Range:** ±2V to ±18V (Dual Supply), 4V to 36V (Single Supply)  
- **Input Offset Voltage:** 3mV (max)  
- **Input Bias Current:** 500nA (max)  
- **Gain Bandwidth Product:** 3MHz (typ)  
- **Slew Rate:** 1.5V/µs (typ)  
- **Common Mode Rejection Ratio (CMRR):** 70dB (typ)  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** SOP-8 (Small Outline Package)  

### **Descriptions and Features:**  
- Low-power dual operational amplifier designed for general-purpose applications.  
- Wide operating voltage range supports both single and dual supply configurations.  
- High gain bandwidth and slew rate for stable performance in signal processing.  
- Suitable for audio, sensor amplification, and industrial control circuits.  
- Built-in phase compensation for improved stability.  
- Low input bias current and offset voltage for precision applications.  

(Note: Always refer to the official datasheet for detailed specifications and application guidelines.)

Partnumber Manufacturer Quantity Availability
UPA1724G-E1,UPA1724GE1 947 In Stock

Description and Introduction

N-channel enhancement type power MOS FET The **UPA1724G-E1** is a **GaN HEMT (Gallium Nitride High Electron Mobility Transistor)** manufactured by **Renesas Electronics**.  

### **Key Specifications:**  
- **Type:** Enhancement-mode GaN HEMT  
- **Package:** **6-pin SOP (Small Outline Package)**  
- **Drain-Source Voltage (VDS):** **650V**  
- **Continuous Drain Current (ID):** **4A**  
- **On-Resistance (RDS(on)):** **180mΩ (typical)**  
- **Gate-Source Voltage (VGS):** **-10V to +7V**  
- **Switching Speed:** High-speed switching capability  
- **Operating Temperature Range:** **-40°C to +125°C**  

### **Features:**  
- **High Efficiency:** Low conduction and switching losses  
- **High Voltage Operation:** Suitable for high-power applications  
- **Fast Switching:** Enables high-frequency operation  
- **Reliability:** Robust GaN technology for stable performance  
- **Compact Package:** SOP-6 for space-saving designs  

### **Applications:**  
- **Power Supplies (AC/DC, DC/DC converters)**  
- **Solar Inverters**  
- **Motor Drives**  
- **Wireless Power Transfer**  
- **Industrial & Automotive Power Systems**  

This device is designed for high-performance power electronics applications requiring efficiency and reliability.

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