UPA1724G-E1Manufacturer: NEC N-channel enhancement type power MOS FET | |||
Partnumber | Manufacturer | Quantity | Availability |
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UPA1724G-E1,UPA1724GE1 | NEC | 2500 | In Stock |
Description and Introduction
N-channel enhancement type power MOS FET **Manufacturer:** NEC  
**Part Number:** UPA1724G-E1   ### **Specifications:**   ### **Descriptions and Features:**   (Note: Always refer to the official datasheet for detailed specifications and application guidelines.) |
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Partnumber | Manufacturer | Quantity | Availability |
UPA1724G-E1,UPA1724GE1 | 947 | In Stock | |
Description and Introduction
N-channel enhancement type power MOS FET The **UPA1724G-E1** is a **GaN HEMT (Gallium Nitride High Electron Mobility Transistor)** manufactured by **Renesas Electronics**.  
### **Key Specifications:**   ### **Features:**   ### **Applications:**   This device is designed for high-performance power electronics applications requiring efficiency and reliability. |
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