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UPA1858GR-9JG from NEC

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UPA1858GR-9JG

Manufacturer: NEC

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Partnumber Manufacturer Quantity Availability
UPA1858GR-9JG,UPA1858GR9JG NEC 27 In Stock

Description and Introduction

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING The part **UPA1858GR-9JG** is manufactured by **NEC**.  

### **Specifications:**  
- **Manufacturer:** NEC  
- **Part Number:** UPA1858GR-9JG  

### **Descriptions & Features:**  
- **Type:** RF Transistor  
- **Application:** High-frequency amplification  
- **Technology:** Gallium Arsenide (GaAs)  
- **Package:** Surface-mount (likely SMD)  
- **Operating Frequency:** Designed for RF/microwave applications (exact frequency range not specified in available data)  
- **Performance:** High gain and low noise characteristics suitable for communication systems.  

For detailed electrical specifications (voltage, current, gain, noise figure), refer to the official NEC datasheet or product documentation.

Application Scenarios & Design Considerations

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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