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UPA1900TE-T1 from NEC

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UPA1900TE-T1

Manufacturer: NEC

Nch enhancement type MOS FET

Partnumber Manufacturer Quantity Availability
UPA1900TE-T1,UPA1900TET1 NEC 15000 In Stock

Description and Introduction

Nch enhancement type MOS FET The **UPA1900TE-T1** is a P-channel MOSFET manufactured by **NEC**. Below are the key specifications, descriptions, and features based on factual data:  

### **Manufacturer:** NEC  
### **Part Number:** UPA1900TE-T1  

### **Specifications:**  
- **Type:** P-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** -30V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Drain Current (ID):** -5.5A  
- **Power Dissipation (PD):** 2W  
- **On-Resistance (RDS(on)):** 70mΩ (max) at VGS = -10V  
- **Threshold Voltage (VGS(th)):** -1.0V to -2.5V  
- **Package:** SOP-8 (Small Outline Package)  

### **Features:**  
- Low on-resistance for improved efficiency  
- Suitable for power management applications  
- Fast switching performance  
- Compact SOP-8 package for space-saving designs  

### **Applications:**  
- Power switching circuits  
- DC-DC converters  
- Load switches  
- Battery management systems  

This information is strictly based on the manufacturer's datasheet and technical documentation.

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