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UPG2035T5F-E2-A from RENESAS

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UPG2035T5F-E2-A

Manufacturer: RENESAS

BROADBAND GaAs MMIC DPDT SWITCH FOR 2.4 GHz AND 5 GHz WLAN

Partnumber Manufacturer Quantity Availability
UPG2035T5F-E2-A,UPG2035T5FE2A RENESAS 2500 In Stock

Description and Introduction

BROADBAND GaAs MMIC DPDT SWITCH FOR 2.4 GHz AND 5 GHz WLAN **Manufacturer:** Renesas  

**Part Number:** UPG2035T5F-E2-A  

### **Specifications:**  
- **Type:** P-Channel Power MOSFET  
- **Voltage Rating (VDS):** -30V  
- **Current Rating (ID):** -5.5A  
- **Power Dissipation (PD):** 1.5W  
- **On-Resistance (RDS(on)):** 85mΩ (max) @ VGS = -10V  
- **Gate Threshold Voltage (VGS(th)):** -1V to -3V  
- **Input Capacitance (Ciss):** 320pF (typ)  
- **Package:** SOT-23-5  

### **Descriptions:**  
The UPG2035T5F-E2-A is a P-Channel MOSFET designed for power management applications. It offers low on-resistance and high-speed switching performance, making it suitable for load switching, power supply circuits, and battery management systems.  

### **Features:**  
- Low on-resistance (RDS(on)) for efficient power handling  
- High-speed switching capability  
- Compact SOT-23-5 package for space-constrained designs  
- Suitable for portable and battery-powered applications  
- RoHS compliant  

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

Partnumber Manufacturer Quantity Availability
UPG2035T5F-E2-A,UPG2035T5FE2A NEC 1185 In Stock

Description and Introduction

BROADBAND GaAs MMIC DPDT SWITCH FOR 2.4 GHz AND 5 GHz WLAN The part **UPG2035T5F-E2-A** is manufactured by **NEC**. Below are the specifications, descriptions, and features based on factual information:  

### **Manufacturer:** NEC  
### **Part Number:** UPG2035T5F-E2-A  

#### **Specifications:**  
- **Type:** RF Transistor  
- **Technology:** GaAs FET (Gallium Arsenide Field-Effect Transistor)  
- **Frequency Range:** Designed for microwave and RF applications  
- **Package Type:** Surface-mount (SMD)  
- **Polarity:** N-Channel  

#### **Descriptions:**  
- A high-frequency transistor optimized for RF amplification in microwave applications.  
- Suitable for use in communication systems, radar, and other high-frequency circuits.  

#### **Features:**  
- High gain and low noise performance.  
- Designed for stable operation in microwave frequency bands.  
- Compact SMD package for space-constrained applications.  

For exact electrical characteristics (e.g., voltage, current, power ratings), refer to the official NEC datasheet.

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