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W20NM60FD from ST,ST Microelectronics

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W20NM60FD

Manufacturer: ST

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

Partnumber Manufacturer Quantity Availability
W20NM60FD ST 44 In Stock

Description and Introduction

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE) The part **W20NM60FD** is a **Power MOSFET** manufactured by **STMicroelectronics (ST)**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **STMicroelectronics (ST)**  

### **Description:**  
- **Type:** N-Channel Power MOSFET  
- **Technology:** MDmesh™ II (Fast Recovery Diode)  
- **Package:** TO-247  
- **Application:** High-efficiency power switching applications  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 20A  
- **Pulsed Drain Current (IDM):** 80A  
- **Power Dissipation (Ptot):** 230W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.19Ω (max) @ VGS = 10V  
- **Input Capacitance (Ciss):** 1800pF (typ)  
- **Output Capacitance (Coss):** 300pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  
- **Turn-On Delay Time (td(on)):** 15ns (typ)  
- **Turn-Off Delay Time (td(off)):** 60ns (typ)  

### **Features:**  
- **Low Gate Charge (Qg):** 60nC (typ)  
- **Low Intrinsic Capacitances** for fast switching  
- **Avalanche Ruggedness** for improved reliability  
- **100% Avalanche Tested**  
- **Fast Intrinsic Diode** for reduced switching losses  
- **Optimized for High-Frequency Applications**  

This information is based on the official STMicroelectronics datasheet for the **W20NM60FD** Power MOSFET.

Application Scenarios & Design Considerations

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

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